论文信息 - Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4 - 字舞流文

Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4

R. H. Williams | R. Cheung | C. Wilkinson | S. Thoms | R. Cowley | M. Foad | U. J. Cox | C. Dunscombe | C. Sotomayor-Torres | M. Watt