Introduction to new memory paradigms: memristive phenomena and neuromorphic applications.

This article provides a brief introduction to the Faraday Discussion "New memory paradigms: memristive phenomena and neuromorphic applications" held in Aachen, Germany, 15-17 October 2018. It will cover basic definitions of memristive switching elements, their main switching modes, and their most important performance parameters as well as applications in neuromorphic computing. The article comprises parts from the following sources: General Introduction and Introduction to Part V of Nanoelectronics and Information Technology, ed. R. Waser, Wiley-VCH, 2012; Chapter 4 of Nanotechnology: Volume 3: Information Technology I, ed. R. Waser, Wiley-VCH, Weinheim, 2008; Chapters 3-9 of Emerging Nanoelectronic Devices, ed. A. Chen, J. Hutchby, V. Zhirnov and G. Bourianoff, Wiley, 2015; Chapter 1 of Resistive Switching, ed. D. Ielmini and R. Waser, Wiley-VCH, 2016 (with permission by Wiley-VCH).

[1]  A. Sawa.  Resistive switching in transition metal oxides , 2008 .

[2]  L.O. Chua,et al.  Memristive devices and systems , 1976, Proceedings of the IEEE.

[3]  J. Yang,et al.  High switching endurance in TaOx memristive devices , 2010 .

[4]  Rainer Waser,et al.  Phase-Change and Redox-Based Resistive Switching Memories , 2015, Proceedings of the IEEE.

[5]  R. Dittmann,et al.  Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches , 2011 .

[6]  Manfred Martin,et al.  Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour , 2014, Nature Communications.

[7]  P Fons,et al.  Interfacial phase-change memory. , 2011, Nature nanotechnology.

[8]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[9]  John Paul Strachan,et al.  Spectromicroscopy of tantalum oxide memristors , 2011 .

[10]  Anne Siemon,et al.  Study of Memristive Associative Capacitive Networks for CAM Applications , 2015, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.

[11]  Dietmar Schroeder,et al.  Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell , 2012 .

[12]  R. Waser,et al.  Thermochemical resistive switching: materials, mechanisms, and scaling projections , 2011 .

[13]  R. Dittmann,et al.  Verification of redox-processes as switching and retention failure mechanisms in Nb:SrTiO3/metal devices. , 2016, Nanoscale.

[14]  Rainer Waser,et al.  Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices. , 2018, ACS applied materials & interfaces.

[15]  S. Menzel,et al.  Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process , 2016 .

[16]  J. Yang,et al.  Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor , 2011, Advanced materials.

[17]  R. Dittmann,et al.  Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM , 2017, Advanced materials.

[18]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[19]  Heiner Giefers,et al.  Mixed-precision in-memory computing , 2017, Nature Electronics.

[20]  R Rosezin,et al.  Capacity based nondestructive readout for complementary resistive switches. , 2011, Nanotechnology.

[21]  Byung Joon Choi,et al.  Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO2 Thin Films for ReRAM , 2011, Advanced materials.

[22]  Benoit Corraze,et al.  Nonthermal and purely electronic resistive switching in a Mott memory , 2014 .

[23]  S. Menzel,et al.  Uniting Gradual and Abrupt set Processes in Resistive Switching Oxides , 2016 .

[24]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[25]  Joachim Mayer,et al.  Nanosized Conducting Filaments Formed by Atomic-Scale Defects in Redox-Based Resistive Switching Memories , 2017 .

[26]  R. Dittmann,et al.  Chemical insight into electroforming of resistive switching manganite heterostructures. , 2013, Nanoscale.

[27]  H.-S. Philip Wong,et al.  In-memory computing with resistive switching devices , 2018, Nature Electronics.

[28]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[29]  Byung Joon Choi,et al.  A Parallel Circuit Model for Multi‐State Resistive‐Switching Random Access Memory , 2012 .

[30]  R. Waser,et al.  Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories , 2009 .

[31]  James A. Bain,et al.  Dynamics of electroforming in binary metal oxide-based resistive switching memory , 2015 .

[32]  Rainer Waser,et al.  Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells , 2010 .

[33]  Ilia Valov,et al.  Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale , 2014 .

[34]  R. Dittmann,et al.  Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4 Thin Films , 2010, Advanced materials.

[35]  R. Dittmann,et al.  Coexistence of Filamentary and Homogeneous Resistive Switching in Fe‐Doped SrTiO3 Thin‐Film Memristive Devices , 2010, Advanced materials.