论文信息 - Anomalous acoustoelectric effect in semiconductor layered structures using separated medium configuration

Anomalous acoustoelectric effect in semiconductor layered structures using separated medium configuration

Abstract An anomalous acoustoelectric effect is observed in semiconductor layered structures and bulk semiconductors due to semiconductor surface conditions. We report preliminary results of this effect in semiconductors using the nondestructive surface acoustic wave (SAW) technique. The magnitude and polarity of the acoustoelectric voltages in GaAs/AlAs superlattices exhibit strong SAW frequency dependencies, a phenomenon that is not observed in bulk semiconductors. The anomalous acoustoelectric voltage (AAV) is detected in high electron mobility transistor (HEMT) and also bulk semiconductors as a function of bias voltage.

V. L. Strashilov | M. N. Abedin | P. Das

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