Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar‐cell devices
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[1] M. Wolf,et al. Drift fields in photovoltaic solar energy converter cells , 1963 .
[2] S. C. Choo. Carrier generation-recombination in the space-charge region of an asymmetrical p-n junction , 1968 .
[3] T. Moss,et al. Calculated efficiencies of practical GaAs and Si solar cells including the effect of built-in electric fields , 1968 .
[4] M. Thekaekara,et al. Solar energy outside the earth's atmosphere. , 1973 .
[5] H. Casey,et al. Optical absorption and photoluminescence studies of thin GaAs layers in GaAs–AlxGa1−xAs double heterostructures , 1974 .
[6] George David Pettit,et al. Some optical properties of the AlxGa1−xAs alloys system , 1976 .
[7] J. Hutchby,et al. Theoretical analysis of Al x Ga 1-x As-GaAs graded band-gap solar cell , 1976 .
[8] M. Konagai,et al. Theoretical analysis of graded-band-gap gallium-aluminum arsenide/gallium arsenide p-Ga1t̄xAlxAs/p-GaAs/n-GaAs solar cells , 1976 .
[9] J.R. Hauser,et al. A computer analysis of heterojunction and graded composition solar cells , 1977, IEEE Transactions on Electron Devices.
[10] M.F. Lamorte,et al. Computer modeling of a two-junction, monolithic cascade solar cell , 1979, IEEE Transactions on Electron Devices.
[11] Stephen J. Fonash,et al. 太阳电池器件物理 = Solar cell device physics , 1982 .
[12] Theoretical analysis of solar cells based on graded band‐gap structures , 1983 .