Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar‐cell devices

The effects of inhomogeneous doping and/or composition profiles in the active regions of AlGaAs/GaAs heteroface solar cells have been studied using a realistic computer model. It is found that for n‐p devices with moderate surface recombination velocities S, only modest improvements in the cell efficiency are obtained by including linear or exponential profiles. Such gradients become more valuable, however, whenever (1) S increases, (2) the solar illumination is increased through concentration, or (3) a p‐n device is desired.