论文信息 - Single-event burnout of epitaxial bipolar transistors

Single-event burnout of epitaxial bipolar transistors

Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

[1] Noriyuki Iwamuro,et al. Two-dimensional power device simulator considering an integral external circuit equation , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[2] Kenneth F. Galloway,et al. Analytical Model for Single Event Burnout of Power MOSFETs , 1987, IEEE Transactions on Nuclear Science.

[3] Thomas A. Fischer,et al. Heavy-Ion-Induced, Gate-Rupture in Power MOSFETs , 1987, IEEE Transactions on Nuclear Science.

[4] A. E. Waskiewicz,et al. Burnout of Power MOS Transistors with Heavy Ions of Californium-252 , 1986, IEEE Transactions on Nuclear Science.

[5] S. Matsuda,et al. Numerical analysis of single event burnout of power MOSFETs , 1993 .

[6] J. H. Hohl,et al. Features of the triggering mechanism for single event burnout of power MOSFETs , 1989 .

[7] G. H. Johnson,et al. Single-event burnout of power bipolar junction transistors , 1991 .

[8] S. Matsuda,et al. Mechanism for single-event burnout of power MOSFETs and its characterization technique , 1992 .

[9] Dennis L. Oberg,et al. First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections , 1987, IEEE Transactions on Nuclear Science.