Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
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[1] H. Monkhorst,et al. SPECIAL POINTS FOR BRILLOUIN-ZONE INTEGRATIONS , 1976 .
[2] A. Zunger,et al. Self-interaction correction to density-functional approximations for many-electron systems , 1981 .
[3] Gil,et al. Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry. , 1995, Physical review. B, Condensed matter.
[4] I. Akasaki,et al. Raman scattering in AlxGa1−xN alloys , 1991 .
[5] P. Gielisse,et al. Raman spectra of AℓN, cubic BN and BP , 1968 .
[6] F. Murnaghan. The Compressibility of Media under Extreme Pressures. , 1944, Proceedings of the National Academy of Sciences of the United States of America.
[7] R. French,et al. Vibrational Spectroscopy of Aluminum Nitride , 1993 .
[8] H. Sobotta,et al. Infrared lattice vibrations of GaN , 1992 .
[9] Izabella Grzegory,et al. Elastic constants of gallium nitride , 1996 .
[10] Alvarez,et al. Electronic structure and properties of AlN. , 1994, Physical review. B, Condensed matter.
[11] Kusunoki. Volume-expansion-induced lattice instability and solid-state amorphization. , 1996, Physical review. B, Condensed matter.
[12] P. Vogl,et al. Dependence on volume of the phonon frequencies and the ir effective charges of several III-V semiconductors , 1983 .
[13] Nelson,et al. Explicit treatment of the gallium 3d electrons in GaN using the plane-wave pseudopotential method. , 1994, Physical review. B, Condensed matter.
[14] C. Kittel. Introduction to solid state physics , 1954 .
[15] S. Nakamura,et al. Brillouin scattering study in the GaN epitaxial layer , 1996 .
[16] P. J. Dean,et al. Optical studies of the phonons and electrons in gallium nitride , 1970 .
[17] Lu,et al. Zinc-blende-wurtzite polytypism in semiconductors. , 1992, Physical review. B, Condensed matter.
[18] Christensen,et al. Calculated structural phase transitions of aluminum nitride under pressure. , 1993, Physical review. B, Condensed matter.
[19] Leonard Kleinman,et al. Deformation Potentials in Silicon. I. Uniaxial Strain , 1962 .
[20] Hui Yang,et al. Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy , 1995 .
[21] Timothy J. Drummond,et al. Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β‐SiC , 1991 .
[22] Kim,et al. Electronic structure of GaN with strain and phonon distortions. , 1994, Physical review. B, Condensed matter.
[23] S. Nakamura,et al. Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers , 1996 .
[24] Nelson,et al. Consistent structural properties for AlN, GaN, and InN. , 1995, Physical review. B, Condensed matter.
[25] Marc Ilegems,et al. Infrared Lattice Vibrations and Free-Electron Dispersion in GaN , 1973 .
[26] Ueno,et al. Stability of the wurtzite-type structure under high pressure: GaN and InN. , 1994, Physical review. B, Condensed matter.
[27] Perlin,et al. Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure. , 1992, Physical review. B, Condensed matter.