Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

PECVD SiC:H (SiCN:H) films were produced using tetramethylsilane (TMS) as a precursor in a mixture with inert helium or ammonia as a source of nitrogen. Mild plasma conditions were chosen in order to prevent the complete decomposition of the precursor molecules and promote the incorporation of the fragments of precursor into the film structure. The effect of deposition temperature and composition of gas mixture on the chemical bonding structure, elemental composition, deposition rate, and optical properties (transmittance, optical bandgap, and refractive index) of films have been examined. Use of the chosen deposition conditions allowed them to reach a relatively high deposition rate (up to 33 nm/min), compared with films produced in high plasma power conditions. Use of ammonia as an additional gas led to effective incorporation of N atoms in the films. The composition of the films moved from SiC:H to SiN:H with increasing of ammonia content to P(NH3)/P(TMS) = 1. The refractive index and optical bandgap of the films varied in the range of 1.55–2.08 and 3.0–5.2 eV, correspondingly, depending on the film composition and chemical bonding structure. The effect of treatment of SiCN films deposited at 400 °C by plasma of He, O2 or NH3 were studied by X-ray photoelectron spectroscopy, atomic force microscopy, and contact angle measurements. It was shown that plasma treatment significantly changes the surface characteristics. The water contact angle of the film was changed from 71 to 37° after exposure in the plasma conditions.

[1]  I. Asanov,et al.  Chemical Structure, Optical and Dielectric Properties of PECVD SiCN Films Obtained from Novel Precursor , 2022, Coatings.

[2]  T. Lee,et al.  Self-Assembled Monolayer Coatings on Gold and Silica Surfaces for Antifouling Applications: A Review , 2022, Coatings.

[3]  Dayu Li,et al.  A Review on Research Progress in Plasma-Controlled Superwetting Surface Structure and Properties , 2022, Polymers.

[4]  B. Beake,et al.  Contact size effects on the friction and wear of amorphous carbon films , 2022, Applied Surface Science Advances.

[5]  P. Roger,et al.  Biocompatible enhancement of poly(ethylene terephthalate) ( PET ) waste films by cold plasma aminolysis , 2022, Journal of Chemical Technology & Biotechnology.

[6]  M. Khomyakov,et al.  Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane , 2022, Coatings.

[7]  M. Sochacki,et al.  A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide , 2021, Materials.

[8]  M. Kosinova,et al.  Organosilicon compounds as single-source precursors for SiCN films production , 2021, Journal of Organometallic Chemistry.

[9]  D. Dikin,et al.  Improving Interlayer Adhesion of Poly(p-phenylene terephthalamide) (PPTA)/Ultra-high-molecular-weight Polyethylene (UHMWPE) Laminates Prepared by Plasma Treatment and Hot Pressing Technique , 2021, Polymers.

[10]  V. Ivashchenko,et al.  An effect of hydrogenation on the photoemission of amorphous SiCN films , 2021 .

[11]  A. Wrobel,et al.  Hard silicon carbonitride thin‐film coatings by remote hydrogen plasma chemical vapor deposition using aminosilane and silazane precursors. 2: Physical, optical, and mechanical properties of deposited films , 2021 .

[12]  T. Matsutani,et al.  Nitrogen ion beam thinning of a-SiCN diaphragm for environmental cell prepared by low-energy ion beam enhanced chemical vapor deposition , 2020 .

[13]  P. Mascher,et al.  X-ray Absorption Spectroscopy of Silicon Carbide Thin Films Improved by Nitrogen for All-Silicon Solar Cells , 2020, ECS Journal of Solid State Science and Technology.

[14]  B. Basu,et al.  SiCxNyOz Coatings Enhance Endothelialization and Bactericidal activity and Reduce Blood Cell Activation. , 2020, ACS biomaterials science & engineering.

[15]  A. Sobczyk-Guzenda,et al.  Thin SiNC/SiOC Coatings with a Gradient of Refractive Index Deposited from Organosilicon Precursor , 2020, Coatings.

[16]  N. Klyui,et al.  Carbon-rich amorphous silicon carbide and silicon carbonitride films for silicon-based photoelectric devices and optical elements: Application from UV to mid-IR spectral range , 2020 .

[17]  J. Balcerzak,et al.  Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor , 2020 .

[18]  Yi-Lung Cheng,et al.  Comparison of SiCxNy barriers using different deposition precursors capped on porous low-dielectric-constant SiOCH dielectric film , 2020 .

[19]  Yuqiang Ding,et al.  Synthesis, characterization, and thermal properties of novel silicon 1,1,3,3‐tetramethylguanidinate derivatives and use as single‐source chemical vapor deposition precursors , 2020 .

[20]  Cong Zhang,et al.  Effects of Si/C Ratio on the Phase Composition of Si-C-N Powders Synthesized by Carbonitriding , 2020, Materials.

[21]  V. Shayapov,et al.  Deposition of Films from a Mixture of Hexamethylcyclotrisilazane Vapor and Argon in Inductively Coupled Plasma , 2019, Glass Physics and Chemistry.

[22]  Wan‐Yu Wu,et al.  Silicon nitride cover layer prepared by silane-free plasma chemical vapor deposition for high quality surface passivation of silicon solar cells , 2019, Surface and Coatings Technology.

[23]  P. Mascher,et al.  Photoluminescence of silicon carbonitride thin films: The interdependence of post-deposition annealing and growth temperature , 2019, Journal of Luminescence.

[24]  B. P. Swain,et al.  Investigation of structural and mechanical properties of silicon carbonitride thin films , 2019, Journal of Alloys and Compounds.

[25]  V. Ivashchenko,et al.  Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias , 2018, Materials Science in Semiconductor Processing.

[26]  A. Nishimoto,et al.  Adhesion and durability of multi-interlayered diamond-like carbon films deposited on aluminum alloy , 2018, Surface and Coatings Technology.

[27]  H. Akasaka,et al.  Effect of Si incorporation on corrosion resistance of hydrogenated amorphous carbon film , 2018, Diamond and related materials.

[28]  B. Wendler,et al.  Chemical structure and optical properties of a-SiNC coatings synthesized from different disilazane precursors with the RF plasma enhanced CVD technique — a comparative study , 2018, Materials Research Express.

[29]  Chun-Yu Lin,et al.  A low cost n-SiCN/p-PS/p-Si heterojunction for high temperature ultraviolet detecting applications , 2018, Sensors and Actuators A: Physical.

[30]  L. Thomas,et al.  Near-field scanning microscopy and physico-chemical analysis versus time of SiCN:H thin films grown in Ar/NH3/TMS gas mixture using MW-Plasma CVD at 400 °C , 2018, Plasma Processes and Polymers.

[31]  V. Shayapov,et al.  Synthesis and Properties of Thin Films Formed by Vapor Deposition from Tetramethylsilane in a Radio-Frequency Inductively Coupled Plasma Discharge , 2018, Glass Physics and Chemistry.

[32]  M. Belmahi,et al.  Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering , 2018, Applied Surface Science.

[33]  K. Jankowski,et al.  Amorphous silicon carbonitride thin‐film coatings produced by remote nitrogen microwave plasma chemical vapour deposition using organosilicon precursor , 2017 .

[34]  Jihperng Leu,et al.  Optical properties of plasma-enhanced chemical vapor deposited SiCxNy films by using silazane precursors , 2017 .

[35]  R. Landers,et al.  Characterization of PECVD a-C:H:Si:O:Cl films , 2017 .

[36]  M. Kosinova,et al.  Plasma-chemical synthesis of transparent dielectric Si–C–O–H films from trimethylphenoxysilane , 2016, High Energy Chemistry.

[37]  T. Staedler,et al.  Mechanical behavior related to various bonding states in amorphous Si–C–N hard films , 2014 .

[38]  R. Mota,et al.  Amorphous silicon carbonitride films modified by plasma immersion ion implantation , 2014 .

[39]  M. Belmahi,et al.  Microwave Plasma Process for SiCN:H Thin Films Synthesis with Composition Varying from SiC:H to SiN:H in H2/N2/Ar/Hexamethyldisilazane Gas Mixture , 2014 .

[40]  F. Massines,et al.  Silicon carbon nitride films as passivation and antireflective coatings for silicon solar cells , 2014 .

[41]  Gilles Flamant,et al.  Optical modeling of multilayered coatings based on SiC(N)H materials for their potential use as high-temperature solar selective absorbers , 2013 .

[42]  B. Glebocki,et al.  a-SiC:H Films by Remote Hydrogen Microwave Plasma CVD From Ethylsilane Precursors**† , 2013 .

[43]  Hong Hanh Nguyen,et al.  Investigation of charge storage and retention characteristics of silicon nitride in NVM based on InGaZnO channels for system-on-panel applications , 2012 .

[44]  S. Guruvenket,et al.  Atmospheric-pressure plasma-enhanced chemical vapor deposition of a-SiCN:H films: role of precursors on the film growth and properties. , 2012, ACS applied materials & interfaces.

[45]  S. Chen,et al.  A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films , 2012, Materials.

[46]  M. Voronkov,et al.  Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride , 2012, Glass Physics and Chemistry.

[47]  N. Fainer.  From organosilicon precursors to multifunctional silicon carbonitride , 2012, Russian Journal of General Chemistry.

[48]  Iwona Blaszczyk-Lezak,et al.  Remote Hydrogen Microwave Plasma Chemical Vapor Deposition of Amorphous Silicon Carbonitride (a‐SiCN) Coatings Derived From Tris(dimethylamino)Silane , 2011 .

[49]  A. Julbe,et al.  Synthesis and characterization of silicon carbonitride films by plasma enhanced chemical vapor deposition (PECVD) using bis(dimethylamino)dimethylsilane (BDMADMS), as membrane for a small molecule gas separation , 2010 .

[50]  A. Zaka,et al.  Effects of He Plasma Pretreatment on Low-k Damage during Cu Surface Cleaning with NH3 Plasma , 2010 .

[51]  D. Pech,et al.  Duplex SiCN/DLC coating as a solution to improve fretting-corrosion resistance of steel , 2009 .

[52]  Zhenfeng Xu,et al.  Online diagnosis of electron excitation temperature in CH4+H2 discharge plasma at atmospheric pressure by optical emission spectra , 2008 .

[53]  F. A. Kuznetsov,et al.  Thin silicon carbonitride films are perspective low-k materials , 2008 .

[54]  Iwona Blaszczyk-Lezak,et al.  Remote Hydrogen Microwave Plasma CVD of Silicon Carbonitride Films from a Tetramethyldisilazane Source. Part 1: Characterization of the Process and Structure of the Films , 2007 .

[55]  F. Dell'Era,et al.  Structural and optical properties of amorphous hydrogenated silicon carbonitride films produced by PECVD , 2006 .

[56]  I. Bertóti,et al.  Characterisation of a-C:H and oxygen-containing Si:C:H films by Raman spectroscopy and XPS , 2005 .

[57]  Dirk Hegemann,et al.  Plasma treatment of polymers for surface and adhesion improvement , 2003 .

[58]  Daniel Y. Kwok,et al.  Contact angle measurement and contact angle interpretation , 1999 .

[59]  C. Choy,et al.  Polymerization of dual ion beam deposited CNx films with increasing N content , 1999 .

[60]  Nelson,et al.  Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon. , 1992, Physical review. B, Condensed matter.

[61]  N. Saito,et al.  Improvement of photoconductivity of a‐SiC:H films by introducing nitrogen during magnetron sputtering process , 1991 .

[62]  R. Swanepoel.  Determination of the thickness and optical constants of amorphous silicon , 1983 .

[63]  A. K. Sinha,et al.  Lorentz‐Lorenz correlation for reactively plasma deposited Si‐N films , 1978 .

[64]  D. K. Owens,et al.  Estimation of the surface free energy of polymers , 1969 .

[65]  R. Grigorovici,et al.  Optical Properties and Electronic Structure of Amorphous Germanium , 1966, 1966.

[66]  L. Thomas,et al.  SiCN:H thin films deposited by MW‐PECVD with liquid organosilicon precursor: Gas ratio influence versus properties of the deposits , 2019, Plasma Processes and Polymers.

[67]  J. Wójcik,et al.  Influence of Deposition Conditions on the Characteristics of Luminescent Silicon Carbonitride Thin Films , 2018 .

[68]  J. Wójcik,et al.  Annealing of silicon carbonitride nanostructured thin films: interdependency of hydrogen content, optical, and structural properties , 2017, Journal of Materials Science.

[69]  C. Banerjee,et al.  Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells , 2017 .

[70]  K. Honda,et al.  Amorphous Carbon-Based Semiconductor Capable of Controlling Its Optical Gap and Conductivity by Incorporating Silicon and Nitrogen Atoms , 2016 .

[71]  V. Shayapov,et al.  PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor , 2015 .

[72]  M. Kosinova,et al.  Bis(trimethylsilyl)Ethylamine: Synthesis, Properties and its use as CVD Precursor , 2013 .

[73]  H. Hoche,et al.  Hard silicon carbonitride films obtained by RF-plasma-enhanced chemical vapour deposition using the single-source precursor bis(trimethylsilyl)carbodiimide , 2006 .

[74]  D. Hercules,et al.  An ESCA study of organosilicon compounds , 1976 .