Memory effects in complex materials and nanoscale systems
暂无分享,去创建一个
[1] Dimitri Jeltsema,et al. Memristive port-Hamiltonian Systems , 2010 .
[2] M. Di Ventra,et al. Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin-blockade regime , 2008 .
[3] Y. Pershin,et al. Spin Memristive Systems: Spin Memory Effects in Semiconductor Spintronics , 2008, 0806.2151.
[4] Konstantin K. Likharev,et al. Superconducting weak links , 1979 .
[5] Kiyoyuki Terakura,et al. First-principles study of the rectifying properties of Pt / TiO 2 interface , 2009 .
[6] D. Strukov,et al. CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices , 2005 .
[7] György Cserey,et al. Macromodeling of the Memristor in SPICE , 2010, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[8] Byung-Gyu Chae,et al. Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging , 2007, Science.
[9] Bharathwaj Muthuswamy,et al. Implementing Memristor Based Chaotic Circuits , 2010, Int. J. Bifurc. Chaos.
[10] H. Kuwahara,et al. Current switching of resistive states in magnetoresistive manganites , 1997, Nature.
[11] W. Levy,et al. Temporal contiguity requirements for long-term associative potentiation/depression in the hippocampus , 1983, Neuroscience.
[12] Warren Robinett,et al. Memristor-CMOS hybrid integrated circuits for reconfigurable logic. , 2009, Nano letters.
[13] Blaise Mouttet,et al. A Memadmittance Systems Model for Thin Film Memory Materials , 2010 .
[14] S. Yasuda,et al. Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution , 2007, cond-mat/0702564.
[15] Michel Dyakonov,et al. Current-induced spin orientation of electrons in semiconductors , 1971 .
[16] Yujong Kim,et al. Colossal electroresistance mechanism in a Au ∕ Pr 0.7 Ca 0.3 Mn O 3 ∕ Pt sandwich structure: Evidence for a Mott transition , 2006 .
[17] Wei Lu,et al. Si/a-Si core/shell nanowires as nonvolatile crossbar switches. , 2008, Nano letters.
[18] Antonio Marcus Nogueira Lima,et al. Modeling of the hysteretic metal-insulator transition in a vanadium dioxide infrared detector , 2002 .
[19] P. Lugli,et al. Read-Out Design Rules for Molecular Crossbar Architectures , 2009, IEEE Transactions on Nanotechnology.
[20] S. Seo,et al. Reproducible resistance switching in polycrystalline NiO films , 2004 .
[21] Wei Wu,et al. A hybrid nanomemristor/transistor logic circuit capable of self-programming , 2009, Proceedings of the National Academy of Sciences.
[22] Frank Moss,et al. Neuro-informatics and neural modelling , 2001 .
[23] T. A. Wey,et al. Amplitude modulator circuit featuring TiO2 memristor with linear dopant drift , 2009 .
[24] Dalibor Biolek,et al. SPICE Model of Memristor with Nonlinear Dopant Drift , 2009 .
[25] A. Pirovano,et al. A Phase Change Memory Compact Model for Multilevel Applications , 2007, IEEE Electron Device Letters.
[26] C. Wright,et al. Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices , 2004 .
[27] Bonnie A. Sheriff,et al. A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre , 2007, Nature.
[28] Yasuhisa Naitoh,et al. Resistance switch employing a simple metal nanogap junction , 2006, Nanotechnology.
[29] Wen Hwa Chu,et al. Analysis of tip deflection and force of a bimetallic cantilever microactuator , 1993 .
[30] K. Terabe,et al. Quantized conductance atomic switch , 2005, Nature.
[31] Daniel Guyomar,et al. Low frequency modelling of hysteresis behaviour and dielectric permittivity in ferroelectric ceramics under electric field , 2007 .
[32] Panagiotis Dimitrakis,et al. MOS memory structures by very-low-energy-implanted Si in thin SiO2 , 2003 .
[33] Koon Gee Neoh,et al. Polymer electronic memories: Materials, devices and mechanisms , 2008 .
[34] M. Di Ventra,et al. Solid-state memcapacitive system with negative and diverging capacitance , 2009, 0912.4921.
[35] C. Gamrat,et al. Nanotube devices based crossbar architecture: toward neuromorphic computing , 2010, Nanotechnology.
[36] Fritz Keilmann,et al. Dynamic tuning of an infrared hybrid-metamaterial resonance using vanadium dioxide , 2008 .
[37] X. Jianping,et al. Transient chaos in smooth memristor oscillator , 2010 .
[38] Valeriy A. Slipko,et al. Radial spin helix in two-dimensional electron systems with Rashba spin-orbit coupling , 2010 .
[39] Panagiotis Dimitrakis,et al. Langmuir−Blodgett Film Deposition of Metallic Nanoparticles and Their Application to Electronic Memory Structures , 2003 .
[40] W. Lu,et al. High-density Crossbar Arrays Based on a Si Memristive System , 2008 .
[41] J. Tour,et al. Resistive switches and memories from silicon oxide. , 2010, Nano letters.
[42] Gregory S. Snider,et al. A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology , 1998 .
[43] T. Berzina,et al. Role of the solid electrolyte composition on the performance of a polymeric memristor , 2010 .
[44] I. Pavlov,et al. Conditioned reflexes: An investigation of the physiological activity of the cerebral cortex. , 1929, Annals of neurosciences.
[45] L.O. Chua,et al. Memristive devices and systems , 1976, Proceedings of the IEEE.
[46] J. Valasek. Piezo-Electric and Allied Phenomena in Rochelle Salt , 1921 .
[47] A. Pirovano,et al. Electronic switching in phase-change memories , 2004, IEEE Transactions on Electron Devices.
[48] Mika Laiho,et al. Two memristors suffice to compute all Boolean functions (Organic and inorganic circuits and devices) , 2010 .
[49] S. Sarma,et al. Spintronics: Fundamentals and applications , 2004, cond-mat/0405528.
[50] Yong Qing Fu,et al. MEMS based digital variable capacitors with a high-k dielectric insulator , 2006 .
[51] H.-G. Meyer,et al. Resonant excitations of single and two-qubit systems coupled to a tank circuit , 2008 .
[52] Y. Dan,et al. Spike-timing-dependent synaptic modification induced by natural spike trains , 2002, Nature.
[53] Toshiro Hiramoto,et al. Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals , 1998 .
[54] F. Argall. Switching phenomena in titanium oxide thin films , 1968 .
[55] Yoseph Imry,et al. Electron Glass Dynamics , 2010, 1010.5767.
[56] Zhong Qi-Shui,et al. Fuzzy Modeling and Impulsive Control of a Memristor-Based Chaotic System , 2010 .
[57] M. M. Glazov,et al. Nonexponential spin relaxation in magnetic fields in quantum wells with random spin-orbit coupling , 2005 .
[58] T. Berzina,et al. Hybrid electronic device based on polyaniline-polyethyleneoxide junction , 2005 .
[60] Markus Janousch,et al. Valence states of Cr and the insulator-to-metal transition in Cr-doped Sr Ti O 3 , 2005 .
[61] Michael B. Partensky. The elastic capacitor and its unusual properties , 2002 .
[62] T. Hasegawa,et al. Switching Property of Atomic Switch Controlled by Solid Electrochemical Reaction , 2006 .
[63] M. Kozicki,et al. Nanoscale memory elements based on solid-state electrolytes , 2005, IEEE Transactions on Nanotechnology.
[64] Hong-Bay Chung,et al. Phase-change characteristics of chalcogenide Ge1Se1Te2 thin films for use in nonvolatile memories , 2007 .
[65] Kailash Gopalakrishnan,et al. Overview of candidate device technologies for storage-class memory , 2008, IBM J. Res. Dev..
[66] Dim-Lee Kwong,et al. Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications , 2005 .
[67] Florian Kronast,et al. Reversible resistive switching and multilevel recording in La0.7Sr0.3MnO3 thin films for low cost nonvolatile memories. , 2010, Nano letters.
[68] Mika Laiho,et al. Stateful implication logic with memristors , 2009, 2009 IEEE/ACM International Symposium on Nanoscale Architectures.
[69] T. Gilbert. A Lagrangian Formulation of the Gyromagnetic Equation of the Magnetization Field , 1955 .
[70] J. Bass,et al. Excitation of a magnetic multilayer by an electric current , 1998 .
[71] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[72] Takashi Matsumoto,et al. A chaotic attractor from Chua's circuit , 1984 .
[73] Sung-Mo Kang,et al. Compact Models for Memristors Based on Charge-Flux Constitutive Relationships , 2010, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[74] Massimiliano Di Ventra,et al. Memristive model of amoeba learning. , 2008, Physical review. E, Statistical, nonlinear, and soft matter physics.
[75] H. Hwang,et al. An electrically modifiable synapse array of resistive switching memory , 2009, Nanotechnology.
[76] D. Morgan,et al. Electrical phenomena in amorphous oxide films , 1970 .
[77] D. Branton,et al. The potential and challenges of nanopore sequencing , 2008, Nature Biotechnology.
[78] S. Sze,et al. Physics of Semiconductor Devices: Sze/Physics , 2006 .
[79] D.S.H. Chan,et al. A flexible polymer memory device , 2007 .
[80] J. C. Scott,et al. Nonvolatile Memory Elements Based on Organic Materials , 2007 .
[81] I. Pavlov. Conditioned Reflexes: An Investigation of the Physiological Activity of the Cerebral Cortex , 1929 .
[82] D. Stewart,et al. The crossbar latch: Logic value storage, restoration, and inversion in crossbar circuits , 2005 .
[83] Daniele Ielmini,et al. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices , 2007 .
[84] Jairo Sinova,et al. Experimental observation of the spin-Hall effect in a two-dimensional spin-orbit coupled semiconductor system. , 2005 .
[85] S. Möller,et al. A polymer/semiconductor write-once read-many-times memory , 2003, Nature.
[86] P. Krzysteczko,et al. Memristive switching of MgO based magnetic tunnel junctions , 2009, 0907.3684.
[87] L. Chua. Nonlinear circuit foundations for nanodevices. I. The four-element torus , 2003 .
[88] M. Alexander,et al. Principles of Neural Science , 1981 .
[89] R. Dittmann,et al. Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.
[90] Franco Nori,et al. Cooling and squeezing the fluctuations of a nanomechanical beam by indirect quantum feedback control , 2009, 0902.2526.
[91] Sung-Yool Choi,et al. Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films , 2009 .
[92] A. A. BOKOV,et al. FRONTIERS OF FERROELECTRICITY , 2022 .
[93] M. Ventra,et al. Colloquium: Physical approaches to DNA sequencing and detection , 2007, 0708.2724.
[94] R. Stephenson. A and V , 1962, The British journal of ophthalmology.
[95] R. Williams,et al. Analog memory capacitor based on field-configurable ion-doped polymers , 2009 .
[96] M. Kozicki,et al. Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$ , 2007, IEEE Transactions on Electron Devices.
[97] S. Ramanathan,et al. Nanoscale imaging and control of resistance switching in VO2 at room temperature , 2010 .
[98] K. A. Jose,et al. RF MEMS and Their Applications , 2002 .
[99] Alexander M. Grishin,et al. Giant resistance switching in metal-insulator-manganite junctions : Evidence for Mott transition , 2005 .
[100] Yike Guo,et al. Delayed Switching in Memristors and Memristive Systems , 2010, IEEE Electron Device Letters.
[101] Massimiliano Di Ventra,et al. Phase-transition driven memristive system , 2009, 0901.0899.
[102] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[103] A. Sawa. Resistive switching in transition metal oxides , 2008 .
[104] A. M. Bratkovsky,et al. Polaronic memory resistors strongly coupled to electrodes , 2009 .
[105] C. Gamrat,et al. An Organic Nanoparticle Transistor Behaving as a Biological Spiking Synapse , 2009, 0907.2540.
[106] Tae-Wook Kim,et al. Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer , 2008, Nanotechnology.
[107] Massimiliano Di Ventra,et al. Ionic memcapacitive effects in nanopores. , 2010, Nano letters.
[108] P. Kelly,et al. Non-collinear magnetoelectronics , 2006, cond-mat/0602151.
[109] M. Häusser. The Hodgkin-Huxley theory of the action potential , 2000, Nature Neuroscience.
[110] R. Williams,et al. Exponential ionic drift: fast switching and low volatility of thin-film memristors , 2009 .
[111] Gabriel M. Rebeiz. RF MEMS: Theory, Design and Technology , 2003 .
[112] Bharathwaj Muthuswamy,et al. Memristor-Based Chaotic Circuits , 2009 .
[113] Stephen J. Wolf,et al. The elusive memristor: properties of basic electrical circuits , 2008, 0807.3994.
[114] Taher Daud,et al. Solid‐state thin‐film memistor for electronic neural networks , 1990 .
[115] J. Yang,et al. Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.
[116] M. Di Ventra,et al. Spin blockade at semiconductor/ferromagnet junctions , 2007, cond-mat/0701678.
[117] G. Bi,et al. Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type , 1998, The Journal of Neuroscience.
[118] H. L. Kwok,et al. Understanding negative capacitance effect using an equivalent resistor‐capacitor circuit , 2008 .
[119] M. Wuttig,et al. Phase-change materials for rewriteable data storage. , 2007, Nature materials.
[120] Tatiana Berzina,et al. A functional polymeric material based on hybrid electrochemically controlled junctions , 2008 .
[121] J. Suehle,et al. A Flexible Solution-Processed Memristor , 2009, IEEE Electron Device Letters.
[122] P. Vontobel,et al. Writing to and reading from a nano-scale crossbar memory based on memristors , 2009, Nanotechnology.
[123] H. Hwang,et al. Resistance switching of copper doped MoOx films for nonvolatile memory applications , 2007 .
[124] Sang-Hyun Hong,et al. High‐Performance Programmable Memory Devices Based on Hyperbranched Copper Phthalocyanine Polymer Thin Films , 2008 .
[125] I. Pavlov,et al. Conditioned reflexes: An investigation of the physiological activity of the cerebral cortex , 2010, Annals of Neurosciences.
[126] J. Pelesko,et al. Modeling MEMS and NEMS , 2002 .
[127] Massimiliano Di Ventra,et al. Experimental demonstration of associative memory with memristive neural networks , 2009, Neural Networks.
[128] J. Crowley,et al. Electrical breakdown of bimolecular lipid membranes as an electromechanical instability. , 1973, Biophysical journal.
[129] Zhangcai Huang,et al. Memristor Model for SPICE , 2010, IEICE Trans. Electron..
[130] T. Matsuo,et al. Analysis of a hysteretic circuit containing an iron-cored inductor and a semiconductor switch , 1999 .
[131] Changqing Xie,et al. Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate thin film , 2009 .
[132] H. Iwasaki,et al. Completely Erasable Phase Change Optical Disc II: Application of Ag-In-Sb-Te Mixed-Phase System for Rewritable Compact Disc Compatible with CD-Velocity and Double CD-Velocity , 1993 .
[133] M. Vroubel,et al. Integrated tunable magnetic RF inductor , 2004, IEEE Electron Device Letters.
[134] Dae-Hwang Kim,et al. Three-dimensional simulation model of switching dynamics in phase change random access memory cells , 2007 .
[135] Jeong Yong Lee,et al. Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition , 2001 .
[136] JinPyo Hong,et al. Nonvolatile Unipolar and Bipolar Resistive SwitchingCharacteristics in Co-doped TiO$_{2}$ Thin Films with DifferentCompliance Currents , 2009 .
[137] H. Markram,et al. Regulation of Synaptic Efficacy by Coincidence of Postsynaptic APs and EPSPs , 1997, Science.
[138] Wei Yang Lu,et al. Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.
[139] A. W. Overhauser. Sign of thecosφconductance term in Josephson tunneling , 2000 .
[140] M. Rozenberg,et al. Mechanism for bipolar resistive switching in transition-metal oxides , 2010, 1001.0703.
[141] Rainer Waser,et al. Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells , 2009, Nanotechnology.
[142] S Lupi,et al. Evidence of a pressure-induced metallization process in monoclinic VO2. , 2007, Physical review letters.
[143] Ohyun Kim,et al. Unipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Films , 2009 .
[144] L. Chua. Memristor-The missing circuit element , 1971 .
[145] Marcelo Messias,et al. Hopf bifurcation from Lines of Equilibria without Parameters in Memristor oscillators , 2010, Int. J. Bifurc. Chaos.
[146] D. N. Basov,et al. Electrodynamics of the vanadium oxides VO2 and V2O3 , 2008, 0803.2739.
[147] M. Blencowe. Nanoelectromechanical systems , 2005, cond-mat/0502566.
[148] Shamik Das,et al. Performance simulation and analysis of a CMOS/nano hybrid nanoprocessor system , 2009, Nanotechnology.
[149] M. Ventra,et al. Microscopic current dynamics in nanoscale junctions , 2007, cond-mat/0701634.
[150] N. Wu,et al. Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. , 2006, Physical Review Letters.
[151] Ralph,et al. Current-induced switching of domains in magnetic multilayer devices , 1999, Science.
[152] Leon O. Chua,et al. Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors , 2009, Proceedings of the IEEE.
[153] Wei Liu,et al. Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al , 2004 .
[154] Tatiana Berzina,et al. Optimization of an organic memristor as an adaptive memory element , 2009 .
[155] S. Sivoththaman,et al. A Tunable RF MEMS Inductor on Silicon Incorporating an Amorphous Silicon Bimorph in a Low-Temperature Process , 2006, IEEE Electron Device Letters.
[156] M. J. Rozenberg,et al. A model for non-volatile electronic memory devices with strongly correlated materials , 2005 .
[157] Rene Lopez,et al. Size effects in the structural phase transition of VO2 nanoparticles , 2002 .
[158] S. O. Park,et al. Electrical observations of filamentary conductions for the resistive memory switching in NiO films , 2006 .
[159] M. Chen,et al. Compound materials for reversible, phase‐change optical data storage , 1986 .
[160] R. McCreery,et al. Solid-State Electrochemistry in Molecule/TiO 2 Molecular Heterojunctions as the Basis of the TiO 2 "Memristor" , 2009 .
[161] J. Clarke,et al. Superconducting quantum bits , 2008, Nature.
[162] Masateru Taniguchi,et al. Resistive switching multistate nonvolatile memory effects in a single cobalt oxide nanowire. , 2010, Nano letters.
[163] Andrew B. Kahng,et al. A power-constrained MPU roadmap for the International Technology Roadmap for Semiconductors (ITRS) , 2009, 2009 International SoC Design Conference (ISOCC).
[164] Thierry Baron,et al. Electronic properties of Ge nanocrystals for non volatile memory applications , 2006 .
[165] C. N. Lau,et al. The mechanism of electroforming of metal oxide memristive switches , 2009, Nanotechnology.
[166] W. Lu,et al. CMOS compatible nanoscale nonvolatile resistance switching memory. , 2008, Nano letters.
[167] Michal M. Okoniewski,et al. A Tunable RF MEMS Inductor , 2004, 2004 International Conference on MEMS, NANO and Smart Systems (ICMENS'04).
[168] B. Josephson. Possible new effects in superconductive tunnelling , 1962 .
[169] Tx,et al. Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface , 2002, cond-mat/0212464.
[170] H. Akinaga,et al. Switchable rectifier built with Pt/TiOx/Pt trilayer , 2009 .
[171] Massimiliano Di Ventra,et al. Neuromorphic, Digital, and Quantum Computation With Memory Circuit Elements , 2010, Proceedings of the IEEE.
[172] Taek Sung Lee,et al. Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing , 2008 .
[173] Ricardo Riaza. First order devices, hybrid memristors, and the frontiers of nonlinear circuit theory , 2010, 1010.0123.
[174] Dalibor Biolek,et al. Mutator for transforming memristor into memcapacitor , 2010 .
[175] M. Rozenberg,et al. Nonvolatile memory with multilevel switching: a basic model. , 2004, Physical review letters.
[176] H. Akinaga,et al. Resistance switching in the metal deficient-type oxides: NiO and CoO , 2007 .
[177] S. Benderli,et al. On SPICE macromodelling of TiO 2 memristors , 2009 .
[178] M. H. Pilkuhn,et al. Capacitance-voltage spectroscopy of silicon nanodots , 2005 .
[179] P. M. Echternach,et al. Nanomechanical measurements of a superconducting qubit , 2009, Nature.
[180] Ivan K Schuller,et al. Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions. , 2008, Physical review letters.
[182] Y. Pershin,et al. Bistable Nonvolatile Elastic-Membrane Memcapacitor Exhibiting a Chaotic Behavior , 2011, IEEE Transactions on Electron Devices.
[183] Rainer Waser,et al. Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells. , 2009, Physical chemistry chemical physics : PCCP.
[184] Zhen Yan,et al. Reversible resistance switching in La0.225Pr0.4Ca0.375MnO3: The Joule-heat-assisted phase transition , 2009 .
[185] Jonathan Z. Sun. Spin-current interaction with a monodomain magnetic body: A model study , 2000 .
[186] H. Eugene Stanley,et al. Dynamics of a ferromagnetic domain wall: Avalanches, depinning transition, and the Barkhausen effect , 1998 .
[187] Shangqing Liu,et al. Electric-pulse-induced capacitance change effect in perovskite oxide thin films , 2006 .
[188] K. Sonoda,et al. A Compact Model of Phase-Change Memory Based on Rate Equations of Crystallization and Amorphization , 2008, IEEE Transactions on Electron Devices.
[189] G. A. de Wijs,et al. The continuing drama of the half-metal/semiconductor interface , 2006 .
[190] George J. Klir,et al. Fuzzy sets and fuzzy logic - theory and applications , 1995 .
[191] Jae Eun Jang,et al. Nanoscale memory cell based on a nanoelectromechanical switched capacitor. , 2008, Nature nanotechnology.
[192] H. Ehrke,et al. Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2. , 2007, Physical review letters.
[193] Massimiliano Di Ventra,et al. Emulation of floating memcapacitors and meminductors using current conveyors , 2011 .
[194] K. Rabe,et al. Physics of thin-film ferroelectric oxides , 2005, cond-mat/0503372.
[195] M. Ventra. Electrical Transport in Nanoscale Systems , 2008 .
[196] T. W. Hickmott. LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS , 1962 .
[197] K.J.S. Cave,et al. MOS (Metal Oxide Semiconductor) Physics and Technology , 1983 .
[198] J. C. Kieffer,et al. Evidence for a structurally-driven insulator-to-metal transition in VO 2 : A view from the ultrafast timescale , 2004, cond-mat/0403214.
[199] K. Y. Tong,et al. Memory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-k gate dielectric , 2006 .
[200] D. Ielmini,et al. Modeling of Set/Reset Operations in NiO-Based Resistive-Switching Memory Devices , 2009, IEEE Transactions on Electron Devices.
[201] Toshiaki Endoh,et al. Ge nanocrystals in SiO2 films , 1997 .
[202] Ivan K. Schuller,et al. First-order reversal curve measurements of the metal-insulator transition in VO 2 : Signatures of persistent metallic domains , 2009 .
[203] Yiran Chen,et al. Spintronic Memristor Temperature Sensor , 2010, IEEE Electron Device Letters.
[204] S. Raoux. Phase Change Materials , 2009 .
[205] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[206] You Yin,et al. Multilevel Storage in Lateral Top-Heater Phase-Change Memory , 2008, IEEE Electron Device Letters.
[207] R Stanley Williams,et al. Molecular dynamics simulations of oxide memory resistors (memristors) , 2010, Nanotechnology.
[208] Gregory S. Snider,et al. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication , 2010, Nature.
[209] Jie Zhang,et al. Printed flexible memory devices using copper phthalocyanine , 2010 .
[210] M. Roukes. Nanoelectromechanical Systems , 2000, cond-mat/0008187.
[211] Kin Leong Pey,et al. The nature of dielectric breakdown , 2008 .
[212] Yan Zhu,et al. Numerical investigation of transient capacitances of Ge∕Si heteronanocrystal memories in retention mode , 2007 .
[213] Jinhyung Cho,et al. Charge retention characteristics in a metal-insulator-semiconductor capacitor containing Ge nanocrystals , 2002 .
[214] M Quintero,et al. Mechanism of electric-pulse-induced resistance switching in manganites. , 2007, Physical review letters.
[215] F. Zhuge,et al. Nonvolatile resistive switching memory based on amorphous carbon , 2010 .
[216] M. Wuttig,et al. Assessment of Se based phase change alloy as a candidate for non-volatile electronic memory applications , 2005 .
[217] H.G.A. Huizing,et al. Characterization of dielectric charging in RF MEMS capacitive switches , 2006, 2006 IEEE International Conference on Microelectronic Test Structures.
[218] Gerhard Müller,et al. A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control , 2007, IEEE Journal of Solid-State Circuits.
[219] M. Sapoff,et al. Theory and application of self-heated thermistors , 1963 .
[220] Stuart A. Wolf,et al. Relaxation dynamics of the metal-semiconductor transition in VO2 thin films , 2010 .
[221] A. Hodgkin,et al. A quantitative description of membrane current and its application to conduction and excitation in nerve , 1952, The Journal of physiology.
[222] Sallee Klein,et al. Memristive Adaptive Filters , 2010 .
[223] Byung-Gyu Chae,et al. Monoclinic and correlated metal phase in VO(2) as evidence of the Mott transition: coherent phonon analysis. , 2006, Physical review letters.
[224] L. Berger,et al. Low‐field magnetoresistance and domain drag in ferromagnets , 1978 .
[225] Byung-Gyu Chae,et al. Memory Metamaterials , 2009, Science.
[226] Shih-Hung Chen,et al. Phase-change random access memory: A scalable technology , 2008, IBM J. Res. Dev..
[227] A. Bratkovsky,et al. Spintronic effects in metallic, semiconductor, metal–oxide and metal–semiconductor heterostructures , 2008 .
[228] R. Waser,et al. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.
[229] Dmitri B Strukov,et al. Four-dimensional address topology for circuits with stacked multilayer crossbar arrays , 2009, Proceedings of the National Academy of Sciences.
[230] Rabinder N Madan,et al. Chua's Circuit: A Paradigm for Chaos , 1993, Chua's Circuit.
[231] D. Strukov,et al. CMOL: Devices, Circuits, and Architectures , 2006 .
[232] Toshiyuki Nakagaki,et al. Amoebae anticipate periodic events. , 2008, Physical review letters.
[233] Eyal Buks,et al. Decoherence and recoherence in a vibrating rf SQUID , 2006 .
[234] S. Ovshinsky. Optical Cognitive Information Processing – A New Field , 2004 .
[235] Dalibor Biolek,et al. PSPICE modeling of meminductor , 2011 .
[236] Ya-Chin King,et al. Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/ , 2001 .
[237] Siegfried Gottwald,et al. Fuzzy Sets and Fuzzy Logic , 1993 .
[238] J. P. Remeika,et al. Structural Aspects of the Metal-Insulator Transitions in Cr-Doped V O 2 , 1972 .
[239] Massimiliano Di Ventra,et al. Memristive circuits simulate memcapacitors and meminductors , 2009, 0910.1583.
[240] Byung Joon Choi,et al. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition , 2005 .
[241] Narayanan Balasubramanian,et al. Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device , 2004 .
[242] S. Kaech,et al. Culturing hippocampal neurons , 2006, Nature Protocols.
[243] Aaas News,et al. Book Reviews , 1893, Buffalo Medical and Surgical Journal.
[244] J. F. Webb,et al. One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm) , 2003 .
[245] Ohyun Kim,et al. Bipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film , 2008 .
[246] Elvira Fortunato,et al. Metal-ferroelectric thin film devices , 2002 .
[247] J. Slonczewski. Current-driven excitation of magnetic multilayers , 1996 .
[248] A N Cleland,et al. Superconducting qubit storage and entanglement with nanomechanical resonators. , 2004, Physical review letters.
[249] Sandip Tiwari,et al. A silicon nanocrystals based memory , 1996 .
[250] Jamie D. Phillips,et al. Hysteretic metal–ferroelectric– semiconductor capacitors based on PZT/ZnO heterostructures , 2007 .
[251] Y. Tokura,et al. Strong electron correlation effects in non-volatile electronic memory devices , 2005, Symposium Non-Volatile Memory Technology 2005..
[252] Tatiana Berzina,et al. Polymeric elements for adaptive networks , 2007 .
[253] Dong‐Won Kim,et al. Electrical Characteristics of Metal–Ferroelectric–Semiconductor Structures Based on Poly(vinylidene fluoride) , 2007 .
[254] A. MacDonald,et al. Thermally assisted current-driven domain-wall motion. , 2006, Physical review letters.
[255] R. Stanley Williams,et al. Molecule-Independent Electrical Switching in Pt/Organic Monolayer/Ti Devices , 2004 .
[256] R. Waser,et al. Coexistence of Bipolar and Unipolar Resistive Switching Behaviors in a Pt ∕ TiO2 ∕ Pt Stack , 2007 .
[257] M. E. Flatte,et al. Electric-field dependent spin diffusion and spin injection into semiconductors , 2002 .
[258] F. J. Morin,et al. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature , 1959 .
[259] Zhiyong Li,et al. Ionic/Electronic Hybrid Materials Integrated in a Synaptic Transistor with Signal Processing and Learning Functions , 2010, Advanced materials.
[260] James M Tour,et al. Reversible bistable switching in nanoscale thiol-substituted oligoaniline molecular junctions. , 2005, Nano letters.
[261] Masatoshi Imada,et al. Metal-insulator transitions , 1998 .
[262] M. Wuttig,et al. Sb-Se-based phase-change memory device with lower power and higher speed operations , 2006, IEEE Electron Device Letters.
[263] Dalibor Biolek,et al. SPICE modeling of memristive, memcapacitative and meminductive systems , 2009, 2009 European Conference on Circuit Theory and Design.
[264] D. Stewart,et al. The missing memristor found , 2008, Nature.
[265] K.K. Likharev,et al. Reconfigurable Hybrid CMOS/Nanodevice Circuits for Image Processing , 2007, IEEE Transactions on Nanotechnology.
[266] D. N. Basov,et al. Correlated metallic state of vanadium dioxide , 2006 .
[267] J. Yang,et al. Switching dynamics in titanium dioxide memristive devices , 2009 .
[268] R. Waser,et al. Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories , 2009 .
[269] Hai Helen Li,et al. Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion , 2009, IEEE Electron Device Letters.
[270] D. Werner,et al. Passive switching of electromagnetic devices with memristors , 2010 .
[271] R. Williams,et al. Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. , 2009, Small.
[272] R. Waser,et al. Mechanism for bipolar switching in a Pt / TiO 2 / Pt resistive switching cell , 2009 .
[273] D. Ohlberg,et al. One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography , 2005 .
[274] Rosario Fazio,et al. Resonant coupling of a SQUID to a mechanical resonator , 2010 .
[275] Xingxiang Zhou,et al. Nonlinear coupling of nanomechanical resonators to josephson quantum circuits. , 2006, Physical review letters.
[276] V. M. Lubecke,et al. Self-assembling MEMS variable and fixed RF inductors , 2001 .
[277] Vladimir Ermolov,et al. Microelectromechanical capacitors for RF applications , 2002 .
[278] Dalibor Biolek,et al. SPICE modelling of memcapacitor , 2010 .
[279] M. Di Ventra,et al. Frequency doubling and memory effects in the spin Hall effect , 2009 .
[280] Ricardo Riaza,et al. First Order Mem-Circuits: Modeling, Nonlinear Oscillations and Bifurcations , 2013, IEEE Transactions on Circuits and Systems I: Regular Papers.
[281] Ute Drechsler,et al. Transition-metal-oxide-based resistance-change memories , 2008, IBM J. Res. Dev..
[282] Mohammad Javad Sharifi,et al. General SPICE Models for Memristor and Application to Circuit Simulation of Memristor-Based Synapses and Memory Cells , 2010, J. Circuits Syst. Comput..
[283] Andrew G. Glen,et al. APPL , 2001 .
[284] J. Simmons,et al. New conduction and reversible memory phenomena in thin insulating films , 1967, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[285] Stefan K. Lai,et al. Flash memories: Successes and challenges , 2008, IBM J. Res. Dev..
[286] Bocheng Bao,et al. Steady periodic memristor oscillator with transient chaotic behaviours , 2010 .