Improved dispersion relations for GaAs and applications to nonlinear optics

The refractive index of GaAs has been measured in the wavelength range from 0.97 to 17 μm, which covers nearly the entire transmission range of the material. Linear and quadratic temperature coefficients of the refractive index have been fitted to data measured between room temperature and 95 °C. In the midinfrared, the refractive index and temperature dependence are obtained from analysis of etalon fringes measured by Fourier-transform spectroscopy in undoped GaAs wafers. In the near infrared, the refractive index is deduced from the quasiphasematching (QPM) wavelengths of second-harmonic generation in orientation-patterned GaAs crystals. Two alternative empirical expressions are fitted to the data to give the refractive index as a function of wavelength and temperature. These dispersion relations agree with observed QPM conditions for midinfrared difference-frequency generation and second-harmonic generation. Predictions for various nonlinear optical interactions are presented, including tuning curves f...

[1]  D. Marple,et al.  Refractive Index of GaAs , 1964 .

[2]  G. Boyd,et al.  Parametric Interaction of Focused Gaussian Light Beams , 1968 .

[3]  J. S. Blakemore Semiconducting and other major properties of gallium arsenide , 1982 .

[4]  Sadao Adachi,et al.  Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design , 1982 .

[5]  S. Adachi GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .

[6]  Mario Bertolotti,et al.  Temperature dependence of the refractive index in semiconductors , 1990 .

[7]  M. Fejer,et al.  Quasi-phase-matched second harmonic generation: tuning and tolerances , 1992 .

[8]  Robert L. Byer,et al.  Investigations of diffusion-bonded stacked GaAs for infrared quasi-phase-matched parametric oscillation , 1994, Photonics West - Lasers and Applications in Science and Engineering.

[9]  C. Tanguy Temperature dependence of the refractive index of direct band gap semiconductors near the absorption threshold: Application to GaAs , 1996 .

[10]  C. Tanguy Refractive index of direct bandgap semiconductors near the absorption threshold: influence of excitonic effects , 1996 .

[11]  E. Lallier,et al.  Efficient second-harmonic generation of a CO2 laser with a quasi-phase-matched GaAs crystal. , 1997 .

[12]  W. J. Moore,et al.  Erratum: Infrared dielectric constant of gallium arsenide [J. Appl. Phys. 80, 6939 (1996)] , 1997 .

[13]  E. Palik Handbook of Optical Constants of Solids , 1997 .

[14]  R L Byer,et al.  16-microm infrared generation by difference-frequency mixing in diffusion-bonded-stacked GaAs. , 1998, Optics letters.

[15]  Martin M. Fejer,et al.  MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy , 1999 .

[16]  H. Sigg,et al.  The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modeling , 2000 .

[17]  M. Iodice,et al.  Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 K at the wavelength of 1.5 μm , 2000 .

[18]  Konstantin L. Vodopyanov,et al.  ZnGeP 2 optical parametric oscillator with 3.8–12.4-µm tunability , 2000 .

[19]  R. Reeber,et al.  Lattice Parameters and Thermal Expansion of Important Semiconductors and Their Substrates , 2000 .

[20]  Takashi Kondo,et al.  GaAs/Ge/GaAs sublattice reversal epitaxy and its application to nonlinear optical devices , 2001 .

[21]  Martin M. Fejer,et al.  All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion , 2001 .

[22]  M. Whitehead,et al.  Mid-infrared (λ ∼ 2–6 µm) measurements of the refractive indices of GaAs and AlAs , 2002 .

[23]  M M Fejer,et al.  Measurement of the nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second-harmonic generation. , 2002, Optics letters.

[24]  R. Triboulet,et al.  Largely tunable midinfrared (8-12 μm) difference frequency generation in isotropic semiconductors , 2002 .

[25]  M M Fejer,et al.  Difference frequency generation of 8-microm radiation in orientation- patterned GaAs. , 2002, Optics letters.