论文信息 - A New Approach to Model Nonquasi-Static ( NQS ) Effects for MOSFETs

A New Approach to Model Nonquasi-Static ( NQS ) Effects for MOSFETs — Part I : Large-Signal Analysis

This paper presents a new nonquasi-static (NQS) model for the MOSFET. The model is derived from physics and only relies on the very basic approximation needed for a charge-based model. To derive the model, a popular variational technique named Galerkin’s Method has been used. The model proves to be very accurate even for extremely fast changes in the bias voltages. Simulation results show a very good match even when the rise time of the applied signal is smaller than the transit time of the device.

Mahesh B. Patil | Ananda S. Roy | Juzer M. Vasi

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