论文信息 - Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs double-heterojunction bipolar transistors

Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs double-heterojunction bipolar transistors

A first 40 Gbit/s RZ response is successfully obtained for monolithic photoreceivers by using a pin/DHBT configuration in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. The power dissipation of the photoreceiver is only 54 mW.

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