Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC
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J. R. Williams | Leonard C. Feldman | Robert A. Weller | Chin-Che Tin | Sokrates T. Pantelides | K. McDonald | L. Feldman | G. Chung | S. Pantelides | C. Tin | K. McDonald | R. Weller | G. Y. Chung | J. H. Won | J. Williams
[1] P. Friedrichs,et al. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype , 1999, IEEE Electron Device Letters.
[2] V. Afanas’ev,et al. Intrinsic SiC/SiO2 Interface States , 1997 .
[3] Jian H. Zhao,et al. Study of interface state density and effective oxide charge in post-metallization annealed SiO/sub 2/-SiC structures , 1999 .
[4] John W. Palmour,et al. Improved oxidation procedures for reduced SiO2/SiC defects , 1996 .
[5] J. J. A. Cooper,et al. Advances in SiC MOS Technology , 1997 .
[6] B. E. Deal,et al. Characteristics of Fast Surface States Associated with SiO2 ‐ Si and Si3 N 4 ‐ SiO2 ‐ Si Structures , 1969 .
[7] M. Melloch,et al. Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interface , 1998 .