论文信息 - Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies - 字舞流文

Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies

W. Strupinski | W. Graeff | W. Wierzchowski | K. Wieteska | K. Kościewicz | K. Mazur | H. Sakowska | W. Hofman

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