Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions

Impurity states in semiconductors, in which two long-lived ground states can be optically coupled to a single excited state, provide a powerful mechanism for applications including lasing without inversion, electromagnetically induced transparency, and optically addressable quantum memory for quantum information processing. We report low-threshold lasing from fluorine-doped ZnMgSe/ZnSe quantum wells in microdisk cavities. The lasing mechanism was studied by power-dependent photoluminescence spectroscopy. Lasing thresholds lower than 50Wcm^-^2 were observed and the fraction of spontaneous emission contributed to the lasing modes was about @b=0.03-0.1.

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