Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges

We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO(2) gate insulator. When a HfO(2) layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7 microm is 11% of the quantum conductance 4e(2)/h. The contact resistance for electron current is estimated to be 14 kOmega. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO(2) and SiO(2) layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology.

[1]  K. Shiraishi.  Theoretical models for work function control (Invited Paper) , 2009 .

[2]  A Javey,et al.  Polymer functionalization for air-stable n-type carbon nanotube field-effect transistors. , 2001, Journal of the American Chemical Society.

[3]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[4]  S. Kishimoto,et al.  High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method , 2008 .

[5]  S. Kishimoto,et al.  Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst , 2003 .

[6]  Yutaka Ohno,et al.  n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes , 2005 .

[7]  Yoshio Nishi,et al.  DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching. , 2006, Journal of the American Chemical Society.

[8]  Kenzo Maehashi,et al.  Air-stable n-type carbon nanotube field-effect transistors with Si3N4 passivation films fabricated by catalytic chemical vapor deposition , 2005 .

[9]  Esther Kim,et al.  Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors , 2002 .

[10]  E. H. Nicollian,et al.  Mos (Metal Oxide Semiconductor) Physics and Technology , 1982 .

[11]  H. Dai,et al.  Modulated chemical doping of individual carbon nanotubes. , 2000, Science.

[12]  R. S. Johnson,et al.  Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition , 2001 .

[13]  M. Lundstrom,et al.  Assessment of high-frequency performance potential of carbon nanotube transistors , 2005, IEEE Transactions on Nanotechnology.

[14]  Satoru Suzuki,et al.  Work functions and valence band states of pristine and Cs-intercalated single-walled carbon nanotube bundles , 2000 .

[15]  James Hone,et al.  Chemical doping of individual semiconducting carbon-nanotube ropes , 2000 .

[16]  Louis E. Brus,et al.  Controlling Energy-Level Alignments at Carbon Nanotube/Au Contacts , 2003 .

[17]  A. Rinzler,et al.  An Integrated Logic Circuit Assembled on a Single Carbon Nanotube , 2006, Science.

[18]  Masamichi Kohno,et al.  Low-temperature synthesis of high-purity single-walled carbon nanotubes from alcohol , 2002 .

[19]  A. R. Wazzan,et al.  MOS (Metal Oxide Semiconductor) Physics and Technology , 1986 .

[20]  Yan Li,et al.  Doping-Free Fabrication of Carbon Nanotube Based Ballistic CMOS Devices and Circuits , 2007 .

[21]  J. Knoch,et al.  High-performance carbon nanotube field-effect transistor with tunable polarities , 2005, IEEE Transactions on Nanotechnology.

[22]  S. Kishimoto,et al.  Evidence of Edge Conduction at Nanotube/Metal Contact in Carbon Nanotube Devices , 2007 .

[23]  A. Shluger,et al.  Vacancy and interstitial defects in hafnia , 2002 .

[24]  J. Rogers,et al.  High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. , 2007, Nature nanotechnology.

[25]  Henri Happy,et al.  80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes , 2009 .

[26]  Shoushan Fan,et al.  Measuring the work function of carbon nanotubes with thermionic method. , 2008, Nano letters.

[27]  Yutaka Ohno,et al.  The effects of chemical doping with F4TCNQ in carbon nanotube field-effect transistors studied by the transmission-line-model technique , 2007 .

[28]  M. Shiraishi,et al.  Work function of carbon nanotubes , 2001 .

[29]  Richard Martel,et al.  Controlling doping and carrier injection in carbon nanotube transistors , 2002 .

[30]  Alexander Star,et al.  Electronic Detection of Specific Protein Binding Using Nanotube FET Devices , 2003 .

[31]  P. Avouris,et al.  Carbon Nanotube Inter- and Intramolecular Logic Gates , 2001 .

[32]  Mark S. Lundstrom,et al.  High-κ dielectrics for advanced carbon-nanotube transistors and logic gates , 2002 .

[33]  R Martel,et al.  Carbon nanotubes as schottky barrier transistors. , 2002, Physical review letters.

[34]  In-Seok Yeo,et al.  Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor , 2001 .

[35]  T Mizutani,et al.  Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors , 2006, Nanotechnology.