论文信息 - Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon☆ - 字舞流文

Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon☆

J. Biersack | D. Fink | M. Behar | P. Fichtner | F. C. Zawislak | C. Olivieri | R. Livi | J. P. D. Souza