Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs

A self-aligned selective-epitaxial-growth (SEG) SiGe HBT with a funnel-shape emitter electrode, which is structurally optimized for an emitter being scaled-down towards 100 nm, was developed. This SiGe HBT has an ECL gate delay of 4.9 ps, and implemented in an ultra-high-speed static frequency divider, produces a maximum operating frequency of 81 GHz.

[1]  Young Kim,et al.  Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[2]  Katsuyoshi Washio,et al.  A 0.2-/spl mu/m 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications , 2000 .

[3]  K. Washio,et al.  82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs , 2000, 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).

[4]  K. Ohhata,et al.  40 Gb/s 4:1 multiplexer and 1:4 demultiplexer IC module using SiGe HBTs , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[5]  T. Masuda,et al.  40 Gb/s analog IC chipset for optical receivers-AGC amplifier, full-wave rectifier and decision circuit implemented using self-aligned SiGe HBTs , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[6]  J.B. Johnson,et al.  A technology simulation methodology for AC-performance optimization of SiGe HBTs , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[7]  F. Wang,et al.  Ultra high speed SiGe NPN for advanced BiCMOS technology , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).