论文信息 - Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2

Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2

HfO<inf>2</inf>, HfZr<inf>x</inf>O<inf>y</inf> and ZrO<inf>2</inf> gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO<inf>2</inf>, ZrO<inf>2</inf> exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO<inf>2</inf> content increases, V<inf>th</inf> shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the oxygen vacancies.

[1] A. Kersch,et al. The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principles , 2008 .

[2] L. Ragnarsson,et al. Effectiveness of Nitridation of Hafnium Silicate Dielectrics: A Comparison Between Thermal and Plasma Nitridation , 2007, IEEE Transactions on Electron Devices.

[3] S. Samavedam,et al. Hafnium zirconate gate dielectric for advanced gate stack applications , 2007 .