论文信息 - Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method

Simulation Investigation of Double-Gate CNR-MOSFETs with a Fully Self-Consistent NEGF and TB Method

Carbon nanoribbon (CNR) double-gate (DG) MOSFETs are simulated using fully self-consistent non-equilibrium Green's function (NEGF) approach and tight-binding method (TB). Transfer and output characteristics, as well as subthreshold slope for various channel length and width are reported. DIBL and SCE effects are quantitatively evaluated and approaches to improving gate controllability are discussed.

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