论文信息 - Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

SiC devices offer potential advantages in power switching applications due to their wide band gap and higher breakdown field compared to silicon. It is widely felt that the first commercial application of SiC power devices will be Schottky diodes used as flyback rectifiers for silicon IGBTs driving inductive loads (motors). The simple substitution of SiC Schottky diodes in place of silicon PiN diodes in these circuits can reduce the overall switching loss of the circuit by up to 35%.

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