Particle measurements in vacuum tools by in situ particle monitor

In situ particle monitors (ISPMs) have been developed and evaluated by installing them onto a variety of vacuum tools. It has been shown that the ISPM’s enable: (1) detection of sporadic particles in vacuum chambers, (2) specification of particle sources, (3) detection of tool maintenance cycles, and (4) optimization of chamber venting conditions. In the process of evaluating the ISPM’s, it has become clear that particle counts measured by ISPM sensors significantly depend on the location where the sensors are installed. As a result of a comparison between the ISPM particle counts and particle-per-wafer-pass particle counts, it has been found that there is a correlation between the two measurements. However, ISPMs offer a broad range of advantages in respect of the reduction of the cost of ownership and being provided real time measurement, and therefore, it is implied that ISPMs have the potential to replace or supplement monitor wafer measurements.

[1]  T. Robinson,et al.  Particle Distributions and Laser-Particle Interactions in an RF Discharge of Silane , 1986, IEEE Transactions on Plasma Science.

[2]  L. A. Larson,et al.  Benefits of real-time, in situ particle monitoring in production medium current implantation , 1989 .

[3]  Graydon B. Larrabee,et al.  Behavior and Detection of Particles in Vacuum Processes , 1989 .

[4]  H. Anderson,et al.  Particulate generation in silane/ammonia rf discharges , 1990 .

[5]  J. McKillop,et al.  In situ plasma contamination measurements by HeNe laser light scattering: A case study , 1990 .

[6]  A. Bouchoule,et al.  Particle generation and behavior in a silane‐argon low‐pressure discharge under continuous or pulsed radio‐frequency excitation , 1991 .

[7]  B. Adibi,et al.  Real time, in situ particle monitoring of the Applied Materials PI9200 ion implanter , 1991 .

[8]  G. Selwyn,et al.  Rastered laser light scattering studies during plasma processing: Particle contamination trapping phenomena , 1991 .

[9]  J. O’Hanlon,et al.  The dependence of contamination particle traps on wafer material and topography , 1992 .

[10]  G. Selwyn,et al.  Plasma particulate contamination control. II. Self‐cleaning tool design , 1992 .

[11]  J. O’Hanlon,et al.  Fluid simulations of particle contamination in postplasma processes , 1995 .

[12]  D. Brown,et al.  Postplasma particle dynamics in a Gaseous Electronics Conference RF Reference Cell , 1995 .

[13]  M. Shiratani,et al.  Detection of particles in rf silane plasmas using photoemission method , 1996 .

[14]  John E. Daugherty,et al.  Current capabilities and limitations of in situ particle monitors in silicon processing equipment , 1996 .

[15]  W. Schwarzenbach,et al.  Particle agglomeration study in rf silane plasmas: In situ study by polarization-sensitive laser light scattering , 1996 .

[16]  Gary S. Selwyn,et al.  Particle contamination formation in magnetron sputtering processes , 1997 .