Advances in wide-bandgap-semiconductor-based photocathode devices for low-light-level applications
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[1] Oswald H. W. Siegmund,et al. Advances in wide-bandgap semiconductor-based photocathode devices for low-light-level applications , 2002, SPIE OPTO.
[2] Manijeh Razeghi,et al. Intrinsic AlxGa1-xN photodetectors for the entire compositional range , 1997, Photonics West.
[3] Manijeh Razeghi,et al. AlGaN ultraviolet detectors , 1997, Photonics West.
[4] Umesh K. Mishra,et al. ENHANCED MG DOPING EFFICIENCY IN AL0.2GA0.8N/GAN SUPERLATTICES , 1999 .
[5] John V. Vallerga,et al. Cross-strip anodes for microchannel plate detectors , 2001, Optics + Photonics.
[6] H. Morkoç,et al. GaN, AlN, and InN: A review , 1992 .
[7] Manijeh Razeghi,et al. Very high quality p-type AlxGa1−xN/GaN superlattice , 2003 .
[8] Henryk Temkin,et al. Mg and O codoping in p-type GaN and AlxGa1−xN (0 , 2002 .
[9] Bruce W Wessels,et al. Electrical properties of p-type GaN:Mg codoped with oxygen , 2001 .
[10] Piero Pianetta,et al. Prospect for high brightness III–nitride electron emitter , 2000 .
[11] Melville P. Ulmer. Requirements and design considerations of UV and x-ray detectors for astronomical purposes , 1997, Photonics West.
[12] Melville P. Ulmer,et al. Progress in the fabrication of GaN photocathodes , 2001, SPIE OPTO.
[13] Josef Zweck,et al. Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors , 2000 .