(Invited) Independent-Double-Gate FinFET SRAM Technology

Double-gate (DG) device technology has been proposed and investigated for many years. However, there are many issues due to the aggressively scaled feature size. Variability of the device due to the various random sources is increasing and will reduce the yield of the circuit. This paper presents the variability issues in the scaled FinFET and focuses on the Vth controllable independent-DG SRAM technology to enhance circuit performance.