Preparation of 0.5–103 Ω-cm GaAs by acceptor precipation during heat treatment of oxygen grown crystals
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[1] J. B. Gunn,et al. Instabilities of Current in III-V Semiconductors , 1964, IBM J. Res. Dev..
[2] J. F. Woods,et al. Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth , 1963 .
[3] R. Stratton,et al. Preparation and characterization of high resistivity GaAs , 1962 .
[4] L. R. Weisberg,et al. Sources of Contamination in GaAs Crystal Growth , 1962 .
[5] L. R. Weisberg,et al. Energy-Level Model for High-Resistivity Gallium Arsenide , 1961, Nature.