论文信息 - Interface stress at thin film semiconductor heterostructures

Interface stress at thin film semiconductor heterostructures

The interface stress at thin film semiconductor heterostructures has been examined for three technologically important ZnSSe/GaAs, InGaPAs/GaAs, and AlGaAs/GaAs heterostructures. For characterization of the interface stress we have developed a new high-sensitivity method using the characteristic Cr-related luminescence lines in GaAs crystal. Based on a series of experimental results obtained with these three semiconductor heterostructures, the origin of the interface stress has been identified, the results showing that the interface stress in the case of ZnSSe/GaAs is well explained by thermal stress and the interface stress of InGaPAs/GaAs and AlGaAs/GaAs by lattice-mismatched stress.

Taneo Nishino | T. Nishino

[1] T. Nishino. A new high-sensitivity characterization method of interface stress at heterostructures by Cr-related luminescence , 1989 .

[2] Y. Hamakawa,et al. Characterization of interface stress at InGaPAs/GaAs by cr-related luminescence line in GaAs , 1986 .

[3] J. Brabant,et al. The no-phonon luminescence at 0.84 eV in GaAs:Cr-splitting under uniaxial stress , 1981 .

[4] J. Barrau,et al. The luminescence at 0.839 eV in GaAs:Cr. A split 5E-5T2 transition , 1983 .

[5] Y. Hamakawa,et al. Interface Stress at ZnSe/GaAs:Cr Heterostructure , 1986 .

[6] L. Eaves,et al. High-magnetic-field Zeeman spectroscopy of the 0.84-eV Cr-related emission and absorption line in GaAs(Cr): Experiment and theory , 1982 .