论文信息 - Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties - 字舞流文

Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties

V. Tokranov | M. Yakimov | S. Oktyabrsky | A. Greene | S. Bentley | A. Jacob | M. Hirayama | S. Madisetti