Temperature Dependent Spectral Response and Responsivity of GeSn Photoconductor on Si
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R. Soref | A. Mosleh | J. Margetis | S. Ghetmiri | W. Du | J. Tolle | H. Naseem | Shui-Qing Yu | B. Conley | G. Sun
[1] Jurgen Michel,et al. Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration , 2012 .
[2] James S. Harris,et al. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy , 2011 .
[3] R. Beeler,et al. Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100) , 2011 .
[4] J. Michel,et al. High-performance Ge-on-Si photodetectors , 2010 .
[5] Richard A. Soref,et al. The Achievements and Challenges of Silicon Photonics , 2008 .
[6] John Kouvetakis,et al. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon , 2006 .
[7] Y. P. Varshni. Temperature dependence of the energy gap in semiconductors , 1967 .