Electroluminescence from Tm-doped GaN deposited by radio-frequency planar magnetron sputtering
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[1] P. Holloway,et al. Visible and near-infrared alternating-current electroluminescence from sputter-grown GaN thin films doped with Er , 2003 .
[2] Paul H. Holloway,et al. Sputter deposited GaN doped erbium thin films: Photoluminescence and 1550 nm infrared electroluminescence , 2003 .
[3] A. Steckl,et al. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices , 2002 .
[4] A. Osvet,et al. Blue, green and red emission from Ce3+, Tb3+ and Eu3+ ions in amorphous GaN and AlN thin films , 2002 .
[5] Ian G. Brown,et al. Photoluminescence and cathodoluminescence of GaN doped with Pr , 2000 .
[6] Jason Heikenfeld,et al. Blue emission from Tm-doped GaN electroluminescent devices , 1999 .
[7] R. Mueller-Mach,et al. Electroluminescence from CaS : TmF3 film prepared by radio frequency magnetron sputtering , 1998 .
[8] T. Hattori,et al. ZnS:Sm grown by metalorganic chemical vapor deposition with Cl codoping , 1995 .
[9] Zhang Zhi-lin,et al. A quantitative evaluation of the excitation mechanism of Tm3+ in a ZnS thin film , 1994 .
[10] H. Lozykowski,et al. AC Electroluminescence of ZnS : Tm , 1994 .
[11] M. Schubert,et al. Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry , 2000 .
[12] Yoshimasa A. Ono,et al. Electroluminescent Displays , 1995 .