Ka-band monolithic VCOs for low noise applications using GaInP/GaAs HBTs

Design, monolithic GaInP/GaAs heterojunction bipolar transistors (HBTs) as the active device are described. The employed HBTs have an emitter area of 2/spl times/1.5 /spl mu/m/spl times/10 /spl mu/m and a self-aligned base. The varactor diode is formed from the base-collector junction of the HBT structure. The oscillators are realized in a common emitter configuration and show tuning ranges of about 1 GHz at center frequencies of 35 GHz, 37 GHz and 40 GHz. Best measured phase noise at 1 MHz off carrier is -107 dBc/Hz.<<ETX>>

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