Fracture toughness and time-dependent strength behavior of low-doped silicon nitrides for applications at 1400 C

The influence of small additions of three selected oxides on the microstructure and the mechanical behavior of high-purity silicon nitride was systematically investigated. Dense silicon nitride bodies doped respectively with SiO[sub 2], Y[sub 2]O[sub 3], and Yb[sub 2]O[sub 3] were fabricated by hot isostatic pressing (HIP). Two different compositions of the intergranular phase were examined for Y[sub 2]O[sub 3] and Yb[sub 2]O[sub 3] in comparison with the same volume of pure SiO[sub 2]. Only in the material with the higher Y[sub 2]O[sub 3] and Yb[sub 2]O[sub 3] content was an improved level of fracture toughness obtained. The mechanical properties at 1,400 C were evaluated with emphasis placed on time-dependent strength and deformation behavior. The materials containing only SiO[sub 2] or doped with the small amount of Y[sub 2]O[sub 3] showed linear elastic K[sub I]-controlled fracture behavior of 1,400 C and the critical phenomenon for failure was subcritical crack growth (SCG) from preexisting defects. In the materials with additions of Yb[sub 2]O[sub 3] or the larger amount of Y[sub 2]O[sub 3], crack extension was governed by creep crack growth as a result of the exhibited strong creep effects. In the silicon nitride doped with 1.7 vol% Yb[sub 2]O[sub 3], however, amore » considerably improved creep behavior as a consequence of crystallization processes in the intergranular phase (Yb[sub 2]Si[sub 2]O[sub 7]) caused by both thermal treatment and stress-initiated effects during the mechanical testing at 1,400 C was found.« less