Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
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Zongyang Hu | Debdeep Jena | Huili Xing | Satyaki Ganguly | Aniruddha Konar | D. Jena | H. Xing | A. Konar | Zongyang Hu | S. Ganguly
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