论文信息 - Analytical 2D modeling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET

Analytical 2D modeling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET

A two-dimensional analytical model for fully depleted cylindrical/surrounding gate MOSFET is presented. We used the evanescent mode analysis to solve the 2D Poisson's equation and to deduce analytically the surface potential and threshold voltage expressions of this device. Comparison with the other models reveals a good agreement.

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