Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology
暂无分享,去创建一个
Meng Li | Hi-Deok Lee | H. Lee | M. Li | Sung-Kwen Oh | Hong-Sik Shin | H. Shin | Sung-Kwen Oh
[1] H. Lee,et al. Effects of Ti Interlayer on Ni'Si Reaction Systems , 2004 .
[2] Christophe Detavernier,et al. Towards implementation of a nickel silicide process for CMOS technologies , 2003 .
[3] Hiroshi Iwai,et al. NiSi salicide technology for scaled CMOS , 2002 .
[4] H. Lee,et al. The Effect of Triple Capping Layer ( Ti ∕ Ni ∕ TiN ) on the Electrical and Structural Properties of Nickel Monosilicide , 2006 .
[5] D. Chi,et al. Effects of Ti Incorporation in Ni on Silicidation Reaction and Structural/Electrical Properties of NiSi , 2004 .
[6] H. Lee,et al. Characterization of the Dopant Dependence of Ni-Silicide on a SOI Substrate for a Nano-Scale CMOSFET , 2007 .
[7] M. C. Poon,et al. Thermal stability of cobalt and nickel silicides , 1998 .
[8] Ga-Won Lee,et al. Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs , 2010 .
[9] H. Lee,et al. Effects of a SiO2 Capping Layer on the Electrical Properties and Morphology of Nickel Silicides , 2002 .
[10] C. Detavernier,et al. Formation and morphological stability of NiSi in the presence of W, Ti, and Ta alloying elements , 2007 .