Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell
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[1] Mark Buckwell,et al. Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr04982b Click here for additional data file. , 2015, Nanoscale.
[2] Giacomo Indiveri,et al. Integration of nanoscale memristor synapses in neuromorphic computing architectures , 2013, Nanotechnology.
[3] Ralph Etienne-Cummings,et al. A Silicon Central Pattern Generator Controls Locomotion in Vivo , 2008, IEEE Transactions on Biomedical Circuits and Systems.
[4] Wei Lu,et al. Random telegraph noise and resistance switching analysis of oxide based resistive memory. , 2014, Nanoscale.
[5] Adnan Mehonic,et al. Electrically tailored resistance switching in silicon oxide , 2012, Nanotechnology.
[6] D. Ielmini,et al. Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth , 2011, IEEE Transactions on Electron Devices.
[7] Giacomo Indiveri,et al. Modeling Selective Attention Using a Neuromorphic Analog VLSI Device , 2000, Neural Computation.
[8] S. Ambrogio,et al. Voltage-dependent random telegraph noise (RTN) in HfOx resistive RAM , 2014, 2014 IEEE International Reliability Physics Symposium.
[9] Anthony J. Kenyon,et al. Resistive switching in silicon sub-oxide films , 2012 .
[10] A. Kenyon,et al. Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory , 2015 .
[11] IndiveriGiacomo. Modeling Selective Attention Using a Neuromorphic Analog VLSI Device , 2000 .
[12] R. Williams,et al. Sub-nanosecond switching of a tantalum oxide memristor , 2011, Nanotechnology.
[13] D. Ielmini,et al. Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices , 2009, IEEE Transactions on Electron Devices.
[14] Shimeng Yu,et al. A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation , 2013, Advanced materials.
[15] A. Hodgkin,et al. A quantitative description of membrane current and its application to conduction and excitation in nerve , 1952, The Journal of physiology.
[16] Carver A. Mead,et al. Neuromorphic electronic systems , 1990, Proc. IEEE.
[17] D. Ielmini,et al. Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories , 2011, Nanotechnology.
[18] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[19] Wei Yang Lu,et al. Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.
[20] L. Chua. Memristor-The missing circuit element , 1971 .
[21] R. Waser. Redox-based resistive switching memories. , 2012, Journal of nanoscience and nanotechnology.
[22] Shimeng Yu,et al. HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector , 2012, 2012 International Electron Devices Meeting.
[23] G. L. Masson,et al. Feedback inhibition controls spike transfer in hybrid thalamic circuits , 2002, Nature.
[24] Fabien Alibart,et al. Plasticity in memristive devices for spiking neural networks , 2015, Front. Neurosci..
[25] Jan van den Hurk,et al. Nanobatteries in redox-based resistive switches require extension of memristor theory , 2013, Nature Communications.
[26] Anthony J. Kenyon,et al. Resistive switching in oxides , 2015 .
[27] Giacomo Indiveri,et al. Real-Time Classification of Complex Patterns Using Spike-Based Learning in Neuromorphic VLSI , 2009, IEEE Transactions on Biomedical Circuits and Systems.
[28] Gert Cauwenberghs,et al. Neuromorphic Silicon Neuron Circuits , 2011, Front. Neurosci.