Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs

Detailed studies of the temperature and voltage dependences of the low-frequency noise of 4H-SiC MOSFETs and TCAD simulations show that the noise is caused primarily by interface traps. First-principle calculations identify these traps as carbon vacancy clusters and nitrogen dopant atoms at or near the SiC/SiO2 interface.

[1]  V. Barone,et al.  Toward reliable density functional methods without adjustable parameters: The PBE0 model , 1999 .

[2]  A. Agarwal,et al.  The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs , 2008 .

[3]  R. O. Jones,et al.  The density functional formalism, its applications and prospects , 1989 .

[4]  F. Hooge.  1/f noise sources , 1994 .

[5]  A. Dasgupta,et al.  Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the $\hbox{1}/f$ Noise of nMOS and pMOS Transistors , 2010, IEEE Transactions on Electron Devices.

[6]  E. Arnold.  Charge-sheet model for silicon carbide inversion layers , 1999 .

[7]  P. M. Horn,et al.  Low-frequency fluctuations in solids: 1/f noise , 1981 .

[8]  Daniel M. Fleetwood,et al.  Estimating oxide‐trap, interface‐trap, and border‐trap charge densities in metal‐oxide‐semiconductor transistors , 1994 .

[9]  S. Dhar,et al.  Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. , 2007, Physical review letters.

[10]  peixiong zhao,et al.  Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices , 2002 .

[11]  Valeri Afanas'ev.  Electronic properties of SiO2/SiC interfaces , 1999 .

[12]  Leonard C. Feldman,et al.  Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface , 2003 .

[13]  Max J. Schulz,et al.  Band offsets and electronic structure of SiC/SiO2 interfaces , 1996 .

[14]  John H. Scofield,et al.  Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors , 1994 .

[15]  D. Fleetwood,et al.  1/f noise and radiation effects in MOS devices , 1994 .

[16]  K. Matocha,et al.  Multiscale Modeling and Analysis of the Nitridation Effect of SiC/SiO2 Interface , 2010 .

[17]  S. Dhar,et al.  Ultrashallow defect states at SiO2∕4H–SiC interfaces , 2008 .