Thermal conductivity of thin SiO2 films
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Abstract On the basis of a mathematical model developed here, thermal conductivities were determined in silicon oxide films of four thicknesses. The films were deposited by plasma-enhanced chemical vapor deposition on monocrystalline silicon substrates. Heat losses by convection and radiation were minimized. The conductivities of the films are significantly lower than those of bulk SiO 2 . As the film thickness decreases, the thermal conductivity is lowered considerably.
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