Electrical Characterizations of ZnO-Based MOS-Type Schottky Barrier Diodes

The electrical properties of Al/ZnO/p-Si MOS (metal-oxide semiconductor)-type Schottky barrier diodes have been investigated in this study. ZnO layer on p-type Si (111) substrate was deposited by evaporation technique. The two contacts were constructed as one top and one bottom contacts. Al rectifying contacts was formed on the top of ZnO layer. Al ohmic contact was formed the back surface of the Si wafer. The current-voltage (I-V) characteristics of Al/ZnO/p-Si diodes were measured at room temperature and in the dark. The main electrical parameters of Al/ZnO/p-Si MOS-type structures, such as the ideality factor (n), barrier height ( ) and series resistance (Rs) have been analyzed and calculated from current-voltage (I-V) characteristics by using thermionic emission theory and Cheung method

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