论文信息 - A 2.4GHz front-end with on-chip balun in a 0.13um CMOS technology

A 2.4GHz front-end with on-chip balun in a 0.13um CMOS technology

A 2.4GHz receiver front-end with on-chip balun implemented with 0.13um CMOS technology is presented in this paper. Based on direct-conversion architecture, the front-end comprises a two-stage LNA (low noise amplifier) with optimized on-chip transformer and quadrature passive mixer. The gm-boosting technique is employed in 1st stage of LNA to achieve low noise and low current simultaneously. In 2nd stage of LNA, gm″ compensation is used for linearity improvement. The front-end draws 26.6mA from 1.2V and simulation result shows a DSB NF of 3.5dB with 52 dB conversion gain.

Fa Foster Dai | Min Lin | Yin Shi | Miao Peng | Tuo Wu

[1] Kwyro Lee,et al. A new linearization technique for MOSFET RF amplifier using multiple gated transistors , 2000 .

[2] David J. Allstot,et al. A capacitor cross-coupled common-gate low-noise amplifier , 2005, IEEE Transactions on Circuits and Systems II: Express Briefs.