Pinch-Off Voltage-Adjustable High-Voltage Junction Field-Effect Transistor

In this letter, a novel type of high-voltage n-channel junction field-effect transistor (JFET) was designed using a conventional n-channel laterally diffused metal-oxide-semiconductor (n-LDMOS) without changing any step in the process. High-voltage JFET can be a start-up device in power factor correction, dc-ac converters, and ac-dc converters for providing a self-powered circuit and minimizing standby power losses without gate control because of its negative threshold voltage. Experimental results show that an n-LDMOS with this JFET structure can achieve a reverse blocking voltage of more than 700 V with very low leakage current. The pinch-off voltage can be designed by changing n-well width to meet the circuit requirement.

[1]  J.A. Appels,et al.  Thin layer high-voltage junction FET (resurf JFET) , 1981, IEEE Electron Device Letters.

[2]  C. Schaeffer,et al.  V-JFET Transistors for over voltage protection in power device series connected applications , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

[3]  J.-C. Crebier,et al.  Integrated driver supply with JFET as a "linear" regulator , 2004, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551).

[4]  T. Suzuki,et al.  Breakdowns in Si JFET's , 1984, IEEE Transactions on Electron Devices.