Oxygen vacancy levels and interfaces of Al2O3

[1]  John Robertson,et al.  Extended Frenkel pairs and band alignment at metal-oxide interfaces , 2009 .

[2]  C. Aldao,et al.  Atomic processes during Cl supersaturation etching of Si(100)-(2Xl) , 2009 .

[3]  J. Robertson Band offsets and work function control in field effect transistors , 2009 .

[4]  J. Robertson,et al.  p-type Fermi level pinning at a Si:Al2O3 model interface , 2008 .

[5]  A. Stesmans,et al.  Internal photoemission at interfaces of high-κ insulators with semiconductors and metals , 2007 .

[6]  John Robertson,et al.  Fermi level pinning by defects in HfO2-metal gate stacks , 2007 .

[7]  J. Robertson,et al.  Band structure of functional oxides by screened exchange and the weighted density approximation , 2006 .

[8]  B. Lee,et al.  Metal gate work function engineering using AlNx interfacial layers , 2006 .

[9]  Tsuyoshi Uda,et al.  Theoretical study on dielectric response of amorphous alumina , 2006 .

[10]  John Robertson,et al.  Defect energy levels in HfO2 high-dielectric-constant gate oxide , 2005 .

[11]  Kazuyoshi Torii,et al.  Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates -A Theoretical Approach , 2004 .

[12]  J. Carrasco,et al.  Theoretical study of bulk and surface oxygen and aluminum vacancies in α − Al 2 O 3 , 2004 .

[13]  Y. Ikuhara,et al.  First-principles calculations of intrinsic defects inAl2O3 , 2003 .

[14]  Matt Probert,et al.  First-principles simulation: ideas, illustrations and the CASTEP code , 2002 .

[15]  Gonzalo Gutiérrez,et al.  Molecular dynamics study of structural properties of amorphous Al 2 O 3 , 2002 .

[16]  A. Soper,et al.  Liquid alumina: detailed atomic coordination determined from neutron diffraction data using empirical potential structure refinement. , 2001, Physical review letters.

[17]  J. Robertson Band offsets of wide-band-gap oxides and implications for future electronic devices , 2000 .

[18]  Eduard A. Cartier,et al.  Local transport and trapping issues in Al2O3 gate oxide structures , 2000 .

[19]  P. Lamparter,et al.  Structure of amorphous Al2O3 , 1997 .

[20]  J. Fripiat,et al.  Aluminum coordination and Lewis acidity in transition aluminas , 1992 .

[21]  R. French Electronic Band Structure of {Al2O3}, with Comparison to Alon and {AIN} , 1990 .

[22]  K. Okada,et al.  Structural analysis of anodic alumina films , 1979 .