-40~85℃ 범위에서 단일모드 동작이 가능한 1.49㎛ 비냉각 DFB-LD의 제작

In order to obtain stable single mode operation around 1.49 ㎛ range over -40~85℃, strained layer MQW DFB-LD is fabricated by MOCVD method. Fabricated DFB-LDs have low threshold current of 6.2㎃ and 20.45㎃ at 25℃ and 85℃, respectively. Also, side-mode suppression ratio of them is over 35 ㏈m up to 85℃. Their slope efficiencies are 0.3㎽/㎃ and 0.21㎽/㎃ at 25℃ and 85℃, respectively.