论文信息 - 3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory - 字舞流文

3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory

F. Schanovsky | M. Karner | D. Verreck | A. Arreghini | G. Van den bosch | A. Furnémont | Z. Stanojevic | K. Steiner | F. Mitterbauer