Reactive pulsed laser deposition of zinc oxide thin films

Zinc oxide thin films have been obtained by reactive pulsed laser ablation of a Zn target in O2 atmosphere (gas pressure 2 Pa) using a doubled frequency Nd:YAG laser (532 nm) which was also assisted by a 13.56 MHz radiofrequency (rf) plasma. The gaseous species have been deposited on Si(100) substrates positioned in on-axis configuration and heated from RT up to 500 °C. The obtained thin films have been compared to those produced in the same conditions by ablation of a ZnO target. The deposited thin films have been characterized by scanning electron microscopy, X-ray diffraction, Raman and infrared spectroscopy techniques. The influence of the rf plasma on the morphological and structural characteristics of these thin films is also briefly discussed.

[1]  Relationship between nonlinear resistivity and the varistor forming mechanism in ZnO ceramics , 1992 .

[2]  B. Tell,et al.  Raman Effect in Zinc Oxide , 1966 .

[3]  D. Cameron,et al.  Aluminum-doped zinc oxide transparent conductors deposited by the sol-gel process , 1994 .

[4]  M. Miki-Yoshida,et al.  Growth, structure and optical characterization of high quality ZnO thin films obtained by spray pyrolysis , 1999 .

[5]  Hong Koo Kim,et al.  Thermally stable ZnO films deposited on GaAs substrates with a SiO2 thin buffer layer , 1992 .

[6]  L. Lim,et al.  PULSED LASER DEPOSITION OF ZNO AS CONDUCTIVE BUFFER LAYER OF (001)-LINBO3 THIN FILMS , 1999 .

[7]  Yongxiang Li,et al.  Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition , 2003 .

[8]  Shinzo Takata,et al.  Highly conductive and transparent zinc oxide films prepared by rf magnetron sputtering under an applied external magnetic field , 1982 .

[9]  G. Parisi,et al.  Titanium nitride thin films deposited by reactive pulsed-laser ablation in RF plasma , 2002 .

[10]  Rommel Noufi,et al.  Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin‐film solar cells , 1999 .

[11]  K. Park,et al.  Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy , 1997 .

[12]  T. Miyata,et al.  Transparent conducting ZnO thin films prepared on low temperature substrates by chemical vapour deposition using Zn(C5H7O2)2 , 1994 .

[13]  Doriana Dimova-Malinovska,et al.  Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering , 2000 .

[14]  Ian W. Boyd,et al.  Pulsed-laser deposited ZnO for device applications , 1996 .

[15]  Ian W. Boyd,et al.  Growth of ZnO thin films on GaAs by pulsed laser deposition , 1995 .

[16]  A. P. Roth,et al.  Semiconducting Zinc Oxide Films Prepared by Metal Organic Chemical Vapor Deposition from Diethyl Zinc , 1981 .

[17]  G. Parisi,et al.  Sensors based on pulsed laser deposition of multilayers of metal oxides , 2000 .

[18]  S. Jeong,et al.  Deposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their structural, electrical and optical properties , 2003 .

[19]  S. Yawale,et al.  Infrared spectra of zinc doped lead borate glasses , 2002 .

[20]  G. Exarhos,et al.  Raman Spectroscopic Investigation of ZnO and Doped ZnO Films, Nanoparticles and Bulk Material at Ambient and High Pressures , 1997 .

[21]  G. Kino,et al.  Theory of interdigital couplers on nonpiezoelectric substrates , 1973 .

[22]  T. Shiosaki,et al.  High rate epitaxial growth of ZnO films on sapphire by planar magnetron rf sputtering system , 1978 .

[23]  C. Lokhande,et al.  Chemical deposition method for metal chalcogenide thin films , 2000 .

[24]  N. Buttá,et al.  Thick Film ZnO Resistive Gas Sensors Analysis of Their Kinetic Behavior , 1989 .

[25]  H. Swinney,et al.  Anisotropy in Lattice Vibrations of Zinc Oxide , 1967 .

[26]  K. Chopra,et al.  Transparent conductors—A status review , 1983 .