论文信息 - Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

A GaN vertical light emitting diode (LED) with a current block layer (CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6% and 60.7% higher than that of vertical LEDs without a CBL at 350 mA, respectively. The efficiencies of vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%, 78% and 85.5% of their maximum efficiency at 350 mA, respectively. Moreover, vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability.

Wang Liancheng | Liu Zhiqiang | Wang Guohong | Yi Xiaoyan | Guo Enqing

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