Enhanced instantaneous bandwidth LDMOS RF power transistor using integrated passive devices

The exponential growth in data traffic across the wireless infrastructure network has necessitated the development of RF power devices capable of transmitting these higher bandwidth signals. In addition, the devices must work in the complete system, including the linearization technique used. In this paper, the benefits of integrated passive elements within the power device are demonstrated and compared to a standard LDMOS power device. In addition, the enhanced performance when used with a digital pre distortion system are demonstrated.