Aalborg Universitet Investigation on the degradation indicators of short-circuit tests in 1 . 2 kV SiC MOSFET power modules
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Francesco Iannuzzo | Paula Diaz Reigosa | Lorenzo Ceccarelli | Iannuzzo | H. Du | F. Iannuzzo | P. D. Reigosa | H. Du | L. Ceccarelli | P. Diaz | Du
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