论文信息 - Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11–20) Al2O3 substrate - 字舞流文

Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11–20) Al2O3 substrate

B. K. Gupta | K. Maurya | Neha Aggarwal | Monu Mishra | G. Sehgal | Sukhveer Singh | M. Kaur | S. Krishna | Govind Gupta | N. Dilawar