An X-ray photoelectron spectroscopy study of chemically etched GaAs

Abstract The surface composition of p-tupe GaAs etched in 5H 2 SO 4 :H 2 O 2 :H 2 O has been studied by means of X-ray photoelectron spectroscopy (XPS). It has been demonstrated that, in contrast with what is generally believed, a uniform oxide film is not produced due to the etching process. Most of the oxygen present on the surface is due to air adsorption after etching. Air oxidation has been followed in great detail. Correlations between etching-bath temperature and surface stoichiometry have been found.

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