Low-energy mass-selected ion beam production of fragments from tetraethylorthosilicate for the formation of silicon dioxide film

[1]  M. Kiuchi,et al.  Low-energy mass-selected ion beam production of fragments produced from hexamethyldisiloxane for the formation of silicon oxide film , 2017 .

[2]  M. Kiuchi,et al.  Low-energy SiC2H6+ and SiC3H9+ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations , 2016 .

[3]  M. El-Genk,et al.  Probability-based threshold displacement energies for oxygen and silicon atoms in α-quartz silica , 2016 .

[4]  M. Kiuchi,et al.  Low-Energy Mass-Selected Ion Beam Production of Fragments Produced from Hexamethyldisilane for SiC Film Formation , 2016 .

[5]  M. Kiuchi,et al.  Fragment ions produced from hexamethyldisilane in a Freeman-type ion source , 2015 .

[6]  B. Shokri,et al.  The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms , 2013 .

[7]  N. Miyatake,et al.  Characteristics of monopole antenna plasmas for TEOS PECVD , 2008 .

[8]  M. Kiuchi,et al.  Fragment Ions of Dimethylsilane Produced by Hot Tungsten Wires , 2006 .

[9]  E. Amanatides,et al.  RF power effect on TEOS/O2 PECVD of silicon oxide thin films , 2005 .

[10]  M. T. Kim.  Deposition kinetics of silicon dioxide from tetraethylorthosilicate by PECVD , 2000 .

[11]  J. Berg,et al.  Growth of carbon thin film by low-energy mass-selected ion beam deposition , 1999 .

[12]  Y. Yamamura,et al.  ENERGY DEPENDENCE OF ION-INDUCED SPUTTERING YIELDS FROM MONATOMIC SOLIDS AT NORMAL INCIDENCE , 1996 .

[13]  Paul A. Kohl,et al.  Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Deposited at Low Temperatures , 1995 .

[14]  A. Lichtenberg,et al.  Principles of Plasma Discharges and Materials Processing , 1994 .

[15]  K. Miyake,et al.  Formation of iron film by ion beam deposition , 1994 .

[16]  P. Haaland,et al.  Ion chemistry in tetraethylorthosilicate (C2H5O)4Si , 1993 .

[17]  C. Pai,et al.  Ion and chemical radical effects on the step coverage of plasma enhanced chemical vapor deposition tetraethylorthosilicate films , 1990 .