论文信息 - Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary HfxAl1 − xOy oxide films - 字舞流文

Nonvolatile memory cells based on the effect of resistive switching in depth-graded ternary HfxAl1 − xOy oxide films

S. A. Zaitsev | Y. Lebedinskii | K. Bulakh | A. Baturin | O. Orlov | D. Negrov | A. Markeev | K. V. Egorov | A. Kuzin | A. V. Zablotskii | E. Gornev | A. A. Chuprik